JPS6315748B2 - - Google Patents
Info
- Publication number
- JPS6315748B2 JPS6315748B2 JP54124121A JP12412179A JPS6315748B2 JP S6315748 B2 JPS6315748 B2 JP S6315748B2 JP 54124121 A JP54124121 A JP 54124121A JP 12412179 A JP12412179 A JP 12412179A JP S6315748 B2 JPS6315748 B2 JP S6315748B2
- Authority
- JP
- Japan
- Prior art keywords
- capacitor
- region
- electrode layer
- insulating film
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 claims description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 229920005591 polysilicon Polymers 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12412179A JPS5649553A (en) | 1979-09-28 | 1979-09-28 | Manufacture of semiconductor memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12412179A JPS5649553A (en) | 1979-09-28 | 1979-09-28 | Manufacture of semiconductor memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5649553A JPS5649553A (en) | 1981-05-06 |
| JPS6315748B2 true JPS6315748B2 (en, 2012) | 1988-04-06 |
Family
ID=14877435
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12412179A Granted JPS5649553A (en) | 1979-09-28 | 1979-09-28 | Manufacture of semiconductor memory |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5649553A (en, 2012) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR900005871B1 (ko) * | 1987-09-21 | 1990-08-13 | 삼성전자 주식회사 | 반도체 메모리소자의 제조방법 |
| KR910010167B1 (ko) * | 1988-06-07 | 1991-12-17 | 삼성전자 주식회사 | 스택 캐패시터 dram셀 및 그의 제조방법 |
-
1979
- 1979-09-28 JP JP12412179A patent/JPS5649553A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5649553A (en) | 1981-05-06 |
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