JPH0481327B2 - - Google Patents

Info

Publication number
JPH0481327B2
JPH0481327B2 JP57163462A JP16346282A JPH0481327B2 JP H0481327 B2 JPH0481327 B2 JP H0481327B2 JP 57163462 A JP57163462 A JP 57163462A JP 16346282 A JP16346282 A JP 16346282A JP H0481327 B2 JPH0481327 B2 JP H0481327B2
Authority
JP
Japan
Prior art keywords
gate electrode
polycrystalline silicon
mask
impurity
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57163462A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5952878A (ja
Inventor
Noriaki Sato
Motoo Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57163462A priority Critical patent/JPS5952878A/ja
Publication of JPS5952878A publication Critical patent/JPS5952878A/ja
Publication of JPH0481327B2 publication Critical patent/JPH0481327B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
JP57163462A 1982-09-20 1982-09-20 半導体装置の製造方法 Granted JPS5952878A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57163462A JPS5952878A (ja) 1982-09-20 1982-09-20 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57163462A JPS5952878A (ja) 1982-09-20 1982-09-20 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5952878A JPS5952878A (ja) 1984-03-27
JPH0481327B2 true JPH0481327B2 (en, 2012) 1992-12-22

Family

ID=15774333

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57163462A Granted JPS5952878A (ja) 1982-09-20 1982-09-20 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5952878A (en, 2012)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60245176A (ja) * 1984-05-18 1985-12-04 Matsushita Electric Ind Co Ltd Ｍｉｓ型電界効果トランジスタの製造方法
JPS60244074A (ja) * 1984-05-18 1985-12-03 Fujitsu Ltd 半導体装置及びその製造方法
JPH0740604B2 (ja) * 1985-07-30 1995-05-01 ソニー株式会社 Ｍｏｓ半導体装置の製造方法
JPS6342161A (ja) * 1986-08-07 1988-02-23 Toshiba Corp Ｃｍｏｓ型半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5917866B2 (ja) * 1975-12-29 1984-04-24 松下電器産業株式会社 ハンドウタイソウチノセイゾウホウホウ
JPS5444482A (en) * 1977-09-14 1979-04-07 Matsushita Electric Ind Co Ltd Mos type semiconductor device and its manufacture
JPS57106169A (en) * 1980-12-24 1982-07-01 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5952878A (ja) 1984-03-27

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