JPS63132453U - - Google Patents

Info

Publication number
JPS63132453U
JPS63132453U JP1987024378U JP2437887U JPS63132453U JP S63132453 U JPS63132453 U JP S63132453U JP 1987024378 U JP1987024378 U JP 1987024378U JP 2437887 U JP2437887 U JP 2437887U JP S63132453 U JPS63132453 U JP S63132453U
Authority
JP
Japan
Prior art keywords
mos transistor
semiconductor substrate
memory device
counter electrode
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1987024378U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987024378U priority Critical patent/JPS63132453U/ja
Publication of JPS63132453U publication Critical patent/JPS63132453U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP1987024378U 1987-02-20 1987-02-20 Pending JPS63132453U (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987024378U JPS63132453U (de) 1987-02-20 1987-02-20

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987024378U JPS63132453U (de) 1987-02-20 1987-02-20

Publications (1)

Publication Number Publication Date
JPS63132453U true JPS63132453U (de) 1988-08-30

Family

ID=30823555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987024378U Pending JPS63132453U (de) 1987-02-20 1987-02-20

Country Status (1)

Country Link
JP (1) JPS63132453U (de)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02199862A (ja) * 1989-01-27 1990-08-08 Nec Corp 半導体装置の製造方法
JPH02262359A (ja) * 1989-04-03 1990-10-25 Takehide Shirato 半導体装置
JPH06151709A (ja) * 1992-11-16 1994-05-31 Matsushita Electric Works Ltd コンデンサ
CN109106401A (zh) * 2017-06-23 2019-01-01 Rends股份有限公司 射精促进装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02199862A (ja) * 1989-01-27 1990-08-08 Nec Corp 半導体装置の製造方法
JPH02262359A (ja) * 1989-04-03 1990-10-25 Takehide Shirato 半導体装置
JPH06151709A (ja) * 1992-11-16 1994-05-31 Matsushita Electric Works Ltd コンデンサ
CN109106401A (zh) * 2017-06-23 2019-01-01 Rends股份有限公司 射精促进装置

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