JPS63124743U - - Google Patents
Info
- Publication number
- JPS63124743U JPS63124743U JP1987016763U JP1676387U JPS63124743U JP S63124743 U JPS63124743 U JP S63124743U JP 1987016763 U JP1987016763 U JP 1987016763U JP 1676387 U JP1676387 U JP 1676387U JP S63124743 U JPS63124743 U JP S63124743U
- Authority
- JP
- Japan
- Prior art keywords
- extraction hole
- metal layer
- electrode extraction
- insulating layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000605 extraction Methods 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
Landscapes
- Wire Bonding (AREA)
Description
第１図は本考案に係る実施例の正面断面図、第
２図は第１図Ａ―Ａ線断面図である。第３図は従
来のＤＨＤ型定電圧ダイオードの断面図、第４図
及び第５図は従来のＴＡＢ型半導体装置の平面図
及び正面断面図である。
１７……半導体基板、１８……絶縁層、１８ａ
……電極引出孔、１９……リング状絶縁層、２０
……金属層。
FIG. 1 is a front sectional view of an embodiment of the present invention, and FIG. 2 is a sectional view taken along the line A--A in FIG. FIG. 3 is a sectional view of a conventional DHD type constant voltage diode, and FIGS. 4 and 5 are a plan view and a front sectional view of a conventional TAB type semiconductor device. 17... Semiconductor substrate, 18... Insulating layer, 18a
... Electrode extraction hole, 19 ... Ring-shaped insulating layer, 20
...Metal layer.
Claims (1)
極引出孔と、上記電極引出孔内の基板表面に形成
した金属層と、上記金属層上に形成したバンプ電
極とを具備する半導体装置において、 前記電極引出孔内の基板上に、金属層を内側と
外側とに遮断するリング状の絶縁層を具備したこ
とを特徴とする半導体装置。[Claims for Utility Model Registration] An electrode extraction hole formed in an insulating layer deposited on a semiconductor substrate, a metal layer formed on the substrate surface within the electrode extraction hole, and a bump electrode formed on the metal layer. A semiconductor device comprising: a ring-shaped insulating layer that isolates a metal layer from inside and outside on the substrate in the electrode extraction hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987016763U JPS63124743U (en) | 1987-02-06 | 1987-02-06 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987016763U JPS63124743U (en) | 1987-02-06 | 1987-02-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63124743U true JPS63124743U (en) | 1988-08-15 |
Family
ID=30808912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987016763U Pending JPS63124743U (en) | 1987-02-06 | 1987-02-06 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63124743U (en) |
-
1987
- 1987-02-06 JP JP1987016763U patent/JPS63124743U/ja active Pending