JPH0310532U - - Google Patents

Info

Publication number
JPH0310532U
JPH0310532U JP1989071992U JP7199289U JPH0310532U JP H0310532 U JPH0310532 U JP H0310532U JP 1989071992 U JP1989071992 U JP 1989071992U JP 7199289 U JP7199289 U JP 7199289U JP H0310532 U JPH0310532 U JP H0310532U
Authority
JP
Japan
Prior art keywords
electrode pad
window opening
insulating film
semiconductor element
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1989071992U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1989071992U priority Critical patent/JPH0310532U/ja
Publication of JPH0310532U publication Critical patent/JPH0310532U/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案に係る半導体装置の一実施例を
示すその半導体素子の要部側断面図、第2図と第
3図は従来の半導体装置の一具体例を示すその半
導体素子の平面図とその要部側断面図である。 1……半導体素子、2……第1電極パツド、4
……絶縁膜、4a……窓開け部、6……第2電極
パツド、6a……周縁部。
FIG. 1 is a sectional side view of a main part of a semiconductor device showing an embodiment of a semiconductor device according to the present invention, and FIGS. 2 and 3 are plan views of the semiconductor device showing a specific example of a conventional semiconductor device. FIG. 1... Semiconductor element, 2... First electrode pad, 4
...Insulating film, 4a...Window opening, 6...Second electrode pad, 6a...Periphery.

Claims (1)

【実用新案登録請求の範囲】 第1電極パツドの配設面上に、窓開け部を有す
る絶縁膜を被着・形成した半導体素子からなり、 上記窓開け部に、その周縁部から絶縁膜上を被
覆する第2電極パツドを積層して形成したことを
特徴とする半導体装置。
[Scope of Claim for Utility Model Registration] A semiconductor element is comprised of a semiconductor element in which an insulating film having a window opening is adhered and formed on the surface on which a first electrode pad is disposed, and the insulating film is coated from the periphery of the window opening to the window opening. 1. A semiconductor device characterized in that it is formed by laminating a second electrode pad that covers a second electrode pad.
JP1989071992U 1989-06-20 1989-06-20 Pending JPH0310532U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1989071992U JPH0310532U (en) 1989-06-20 1989-06-20

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1989071992U JPH0310532U (en) 1989-06-20 1989-06-20

Publications (1)

Publication Number Publication Date
JPH0310532U true JPH0310532U (en) 1991-01-31

Family

ID=31609525

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1989071992U Pending JPH0310532U (en) 1989-06-20 1989-06-20

Country Status (1)

Country Link
JP (1) JPH0310532U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007291561A (en) * 2006-04-25 2007-11-08 L Rose:Kk Undergarment sewn together with silk fabric on inside whole surface

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5192171A (en) * 1975-02-10 1976-08-12
JPS5295171A (en) * 1976-02-06 1977-08-10 Hitachi Ltd Electrode for semi-conductor
JPS6338236A (en) * 1986-08-01 1988-02-18 Fujitsu Ltd Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5192171A (en) * 1975-02-10 1976-08-12
JPS5295171A (en) * 1976-02-06 1977-08-10 Hitachi Ltd Electrode for semi-conductor
JPS6338236A (en) * 1986-08-01 1988-02-18 Fujitsu Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007291561A (en) * 2006-04-25 2007-11-08 L Rose:Kk Undergarment sewn together with silk fabric on inside whole surface

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