JPS63124566A - サイリスタ - Google Patents
サイリスタInfo
- Publication number
- JPS63124566A JPS63124566A JP61271211A JP27121186A JPS63124566A JP S63124566 A JPS63124566 A JP S63124566A JP 61271211 A JP61271211 A JP 61271211A JP 27121186 A JP27121186 A JP 27121186A JP S63124566 A JPS63124566 A JP S63124566A
- Authority
- JP
- Japan
- Prior art keywords
- thyristor
- electrode
- terminal
- base
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/211—Gated diodes
- H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
- H01L2924/1302—GTO - Gate Turn-Off thyristor
Landscapes
- Thyristors (AREA)
- Thyristor Switches And Gates (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61271211A JPS63124566A (ja) | 1986-11-14 | 1986-11-14 | サイリスタ |
| KR1019870012690A KR900008151B1 (ko) | 1986-11-14 | 1987-11-11 | 다이리스터 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61271211A JPS63124566A (ja) | 1986-11-14 | 1986-11-14 | サイリスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63124566A true JPS63124566A (ja) | 1988-05-28 |
| JPH0478187B2 JPH0478187B2 (cg-RX-API-DMAC7.html) | 1992-12-10 |
Family
ID=17496894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61271211A Granted JPS63124566A (ja) | 1986-11-14 | 1986-11-14 | サイリスタ |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS63124566A (cg-RX-API-DMAC7.html) |
| KR (1) | KR900008151B1 (cg-RX-API-DMAC7.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100452312B1 (ko) * | 1997-05-13 | 2005-07-05 | 삼성전자주식회사 | 지티오(gto)를이용한메모리소자및그의제조방법 |
-
1986
- 1986-11-14 JP JP61271211A patent/JPS63124566A/ja active Granted
-
1987
- 1987-11-11 KR KR1019870012690A patent/KR900008151B1/ko not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| KR900008151B1 (ko) | 1990-11-03 |
| JPH0478187B2 (cg-RX-API-DMAC7.html) | 1992-12-10 |
| KR880006784A (ko) | 1988-07-25 |
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