JPS63124564A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS63124564A JPS63124564A JP61271208A JP27120886A JPS63124564A JP S63124564 A JPS63124564 A JP S63124564A JP 61271208 A JP61271208 A JP 61271208A JP 27120886 A JP27120886 A JP 27120886A JP S63124564 A JPS63124564 A JP S63124564A
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- layer
- region
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 238000000034 method Methods 0.000 claims abstract description 59
- 238000005530 etching Methods 0.000 claims abstract description 40
- 230000003647 oxidation Effects 0.000 claims abstract description 20
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 20
- 239000012535 impurity Substances 0.000 claims description 22
- 239000013078 crystal Substances 0.000 claims description 20
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 claims 15
- 239000012044 organic layer Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 66
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 64
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 46
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 43
- 239000000758 substrate Substances 0.000 abstract description 13
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 12
- 229910052681 coesite Inorganic materials 0.000 abstract 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract 5
- 239000000377 silicon dioxide Substances 0.000 abstract 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract 5
- 229910052682 stishovite Inorganic materials 0.000 abstract 5
- 229910052905 tridymite Inorganic materials 0.000 abstract 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 55
- 238000009792 diffusion process Methods 0.000 description 34
- 238000000605 extraction Methods 0.000 description 14
- 238000002955 isolation Methods 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61271208A JPS63124564A (ja) | 1986-11-14 | 1986-11-14 | 半導体装置の製造方法 |
| US07/070,830 US4782030A (en) | 1986-07-09 | 1987-07-07 | Method of manufacturing bipolar semiconductor device |
| KR1019870007368A KR950003932B1 (ko) | 1986-07-09 | 1987-07-09 | 바이폴라형 반도체장치의 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61271208A JPS63124564A (ja) | 1986-11-14 | 1986-11-14 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63124564A true JPS63124564A (ja) | 1988-05-28 |
| JPH054810B2 JPH054810B2 (enrdf_load_stackoverflow) | 1993-01-20 |
Family
ID=17496854
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61271208A Granted JPS63124564A (ja) | 1986-07-09 | 1986-11-14 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63124564A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5587327A (en) * | 1994-05-24 | 1996-12-24 | Daimler Benz Ag | Process for preparing a heterojunction bipolar transistor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61166167A (ja) * | 1985-01-18 | 1986-07-26 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPS61172369A (ja) * | 1985-01-28 | 1986-08-04 | Hitachi Denshi Ltd | 半導体装置の製造方法 |
| JPS61198778A (ja) * | 1985-02-28 | 1986-09-03 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS6221270A (ja) * | 1985-07-19 | 1987-01-29 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
-
1986
- 1986-11-14 JP JP61271208A patent/JPS63124564A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61166167A (ja) * | 1985-01-18 | 1986-07-26 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPS61172369A (ja) * | 1985-01-28 | 1986-08-04 | Hitachi Denshi Ltd | 半導体装置の製造方法 |
| JPS61198778A (ja) * | 1985-02-28 | 1986-09-03 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS6221270A (ja) * | 1985-07-19 | 1987-01-29 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5587327A (en) * | 1994-05-24 | 1996-12-24 | Daimler Benz Ag | Process for preparing a heterojunction bipolar transistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH054810B2 (enrdf_load_stackoverflow) | 1993-01-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4892837A (en) | Method for manufacturing semiconductor integrated circuit device | |
| JPS63234534A (ja) | 半導体素子の製造方法 | |
| JPS63140571A (ja) | バイポ−ラトランジスタおよびその製造方法 | |
| JPH05206451A (ja) | Ｍｏｓｆｅｔおよびその製造方法 | |
| US4579625A (en) | Method of producing a complementary semiconductor device with a dielectric isolation structure | |
| US4686762A (en) | Fabricating semiconductor device with polysilicon protection layer during processing | |
| JPS62194673A (ja) | 半導体装置の製造方法 | |
| JPS63207177A (ja) | 半導体装置の製造方法 | |
| JPS63124564A (ja) | 半導体装置の製造方法 | |
| US4546537A (en) | Method for producing a semiconductor device utilizing V-groove etching and thermal oxidation | |
| JPS5923476B2 (ja) | 半導体装置の製造方法 | |
| JP2663632B2 (ja) | 半導体装置及びその製造方法 | |
| JPS60164356A (ja) | 半導体装置 | |
| JPS63241964A (ja) | 半導体装置の製造方法 | |
| JPH0335528A (ja) | 半導体装置の製造方法 | |
| JP2615958B2 (ja) | バイポーラ型半導体装置の製造方法 | |
| JPH01214064A (ja) | 絶縁ゲート電界効果トランジスタおよびその製造方法 | |
| JPS6117143B2 (enrdf_load_stackoverflow) | ||
| JPS594073A (ja) | 半導体装置の製造方法 | |
| JP2817184B2 (ja) | 半導体装置の製造方法 | |
| JPH0516662B2 (enrdf_load_stackoverflow) | ||
| JPS62206873A (ja) | 半導体装置の製造方法 | |
| JPS59217363A (ja) | バイポ−ラ型半導体装置の製造方法 | |
| JPS61295660A (ja) | 半導体装置の製造方法 | |
| JPH0230160A (ja) | 半導体装置 |