JPS63124564A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS63124564A
JPS63124564A JP61271208A JP27120886A JPS63124564A JP S63124564 A JPS63124564 A JP S63124564A JP 61271208 A JP61271208 A JP 61271208A JP 27120886 A JP27120886 A JP 27120886A JP S63124564 A JPS63124564 A JP S63124564A
Authority
JP
Japan
Prior art keywords
film
insulating film
layer
region
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61271208A
Other languages
English (en)
Japanese (ja)
Other versions
JPH054810B2 (enrdf_load_stackoverflow
Inventor
Yasuhiro Katsumata
勝又　康弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61271208A priority Critical patent/JPS63124564A/ja
Priority to US07/070,830 priority patent/US4782030A/en
Priority to KR1019870007368A priority patent/KR950003932B1/ko
Publication of JPS63124564A publication Critical patent/JPS63124564A/ja
Publication of JPH054810B2 publication Critical patent/JPH054810B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP61271208A 1986-07-09 1986-11-14 半導体装置の製造方法 Granted JPS63124564A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP61271208A JPS63124564A (ja) 1986-11-14 1986-11-14 半導体装置の製造方法
US07/070,830 US4782030A (en) 1986-07-09 1987-07-07 Method of manufacturing bipolar semiconductor device
KR1019870007368A KR950003932B1 (ko) 1986-07-09 1987-07-09 바이폴라형 반도체장치의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61271208A JPS63124564A (ja) 1986-11-14 1986-11-14 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS63124564A true JPS63124564A (ja) 1988-05-28
JPH054810B2 JPH054810B2 (enrdf_load_stackoverflow) 1993-01-20

Family

ID=17496854

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61271208A Granted JPS63124564A (ja) 1986-07-09 1986-11-14 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS63124564A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5587327A (en) * 1994-05-24 1996-12-24 Daimler Benz Ag Process for preparing a heterojunction bipolar transistor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61166167A (ja) * 1985-01-18 1986-07-26 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS61172369A (ja) * 1985-01-28 1986-08-04 Hitachi Denshi Ltd 半導体装置の製造方法
JPS61198778A (ja) * 1985-02-28 1986-09-03 Fujitsu Ltd 半導体装置の製造方法
JPS6221270A (ja) * 1985-07-19 1987-01-29 Matsushita Electric Ind Co Ltd 半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61166167A (ja) * 1985-01-18 1986-07-26 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPS61172369A (ja) * 1985-01-28 1986-08-04 Hitachi Denshi Ltd 半導体装置の製造方法
JPS61198778A (ja) * 1985-02-28 1986-09-03 Fujitsu Ltd 半導体装置の製造方法
JPS6221270A (ja) * 1985-07-19 1987-01-29 Matsushita Electric Ind Co Ltd 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5587327A (en) * 1994-05-24 1996-12-24 Daimler Benz Ag Process for preparing a heterojunction bipolar transistor

Also Published As

Publication number Publication date
JPH054810B2 (enrdf_load_stackoverflow) 1993-01-20

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