JPH0516662B2 - - Google Patents
Info
- Publication number
- JPH0516662B2 JPH0516662B2 JP61161618A JP16161886A JPH0516662B2 JP H0516662 B2 JPH0516662 B2 JP H0516662B2 JP 61161618 A JP61161618 A JP 61161618A JP 16161886 A JP16161886 A JP 16161886A JP H0516662 B2 JPH0516662 B2 JP H0516662B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- single crystal
- crystal silicon
- region
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61161618A JPS6317558A (ja) | 1986-07-09 | 1986-07-09 | 半導体装置の製造方法 |
| US07/070,830 US4782030A (en) | 1986-07-09 | 1987-07-07 | Method of manufacturing bipolar semiconductor device |
| KR1019870007368A KR950003932B1 (ko) | 1986-07-09 | 1987-07-09 | 바이폴라형 반도체장치의 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61161618A JPS6317558A (ja) | 1986-07-09 | 1986-07-09 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6317558A JPS6317558A (ja) | 1988-01-25 |
| JPH0516662B2 true JPH0516662B2 (enrdf_load_stackoverflow) | 1993-03-05 |
Family
ID=15738598
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61161618A Granted JPS6317558A (ja) | 1986-07-09 | 1986-07-09 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6317558A (enrdf_load_stackoverflow) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5889863A (ja) * | 1981-11-24 | 1983-05-28 | Hitachi Ltd | 半導体装置の製造方法 |
| JPS62141768A (ja) * | 1985-12-16 | 1987-06-25 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
-
1986
- 1986-07-09 JP JP61161618A patent/JPS6317558A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6317558A (ja) | 1988-01-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4252582A (en) | Self aligned method for making bipolar transistor having minimum base to emitter contact spacing | |
| US4339767A (en) | High performance PNP and NPN transistor structure | |
| US4892837A (en) | Method for manufacturing semiconductor integrated circuit device | |
| EP0083816B1 (en) | Semiconductor device having an interconnection pattern | |
| JPH0355984B2 (enrdf_load_stackoverflow) | ||
| JP3450682B2 (ja) | 半導体記憶装置およびその製造方法 | |
| JPS62179764A (ja) | 壁スペ−サを有するバイポ−ラ半導体装置の製造方法 | |
| JPH0340938B2 (enrdf_load_stackoverflow) | ||
| JPH02143456A (ja) | 積層型メモリセルの製造方法 | |
| JPH0513535B2 (enrdf_load_stackoverflow) | ||
| US6197649B1 (en) | Process for manufacturing planar fast recovery diode using reduced number of masking steps | |
| JPH0516662B2 (enrdf_load_stackoverflow) | ||
| KR100286349B1 (ko) | 반도체 소자의 제조방법 | |
| JP2707646B2 (ja) | 半導体装置の製造方法 | |
| JPS62120040A (ja) | 半導体装置の製造方法 | |
| JP2764988B2 (ja) | 半導体装置 | |
| JPH0338742B2 (enrdf_load_stackoverflow) | ||
| JPH054810B2 (enrdf_load_stackoverflow) | ||
| JP2615641B2 (ja) | 半導体装置およびその製造方法 | |
| JPS5919374A (ja) | 半導体装置の製造方法 | |
| JPS59217363A (ja) | バイポ−ラ型半導体装置の製造方法 | |
| JPS60244036A (ja) | 半導体装置とその製造方法 | |
| JPH0240921A (ja) | バイポーラトランジスタの製造方法 | |
| JPS639150A (ja) | 半導体装置の製造方法 | |
| JPS63241964A (ja) | 半導体装置の製造方法 |