JPS6310905B2 - - Google Patents

Info

Publication number
JPS6310905B2
JPS6310905B2 JP56150693A JP15069381A JPS6310905B2 JP S6310905 B2 JPS6310905 B2 JP S6310905B2 JP 56150693 A JP56150693 A JP 56150693A JP 15069381 A JP15069381 A JP 15069381A JP S6310905 B2 JPS6310905 B2 JP S6310905B2
Authority
JP
Japan
Prior art keywords
metal
resist
semiconductor substrate
gate
window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56150693A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5852880A (ja
Inventor
Yoshiaki Sano
Masahiro Akyama
Toshio Nonaka
Toshimasa Ishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP56150693A priority Critical patent/JPS5852880A/ja
Publication of JPS5852880A publication Critical patent/JPS5852880A/ja
Publication of JPS6310905B2 publication Critical patent/JPS6310905B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP56150693A 1981-09-25 1981-09-25 半導体素子の製造方法 Granted JPS5852880A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56150693A JPS5852880A (ja) 1981-09-25 1981-09-25 半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56150693A JPS5852880A (ja) 1981-09-25 1981-09-25 半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JPS5852880A JPS5852880A (ja) 1983-03-29
JPS6310905B2 true JPS6310905B2 (enrdf_load_stackoverflow) 1988-03-10

Family

ID=15502375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56150693A Granted JPS5852880A (ja) 1981-09-25 1981-09-25 半導体素子の製造方法

Country Status (1)

Country Link
JP (1) JPS5852880A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06339402A (ja) * 1993-05-31 1994-12-13 Isao Yoshida 履物用中敷

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5923565A (ja) * 1982-07-30 1984-02-07 Hitachi Ltd 半導体装置の製法
JPS60253277A (ja) * 1984-05-30 1985-12-13 Oki Electric Ind Co Ltd 半導体素子の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5396671A (en) * 1977-02-03 1978-08-24 Oki Electric Ind Co Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06339402A (ja) * 1993-05-31 1994-12-13 Isao Yoshida 履物用中敷

Also Published As

Publication number Publication date
JPS5852880A (ja) 1983-03-29

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