JPS6291494A - 化合物半導体単結晶成長方法及び装置 - Google Patents

化合物半導体単結晶成長方法及び装置

Info

Publication number
JPS6291494A
JPS6291494A JP60228901A JP22890185A JPS6291494A JP S6291494 A JPS6291494 A JP S6291494A JP 60228901 A JP60228901 A JP 60228901A JP 22890185 A JP22890185 A JP 22890185A JP S6291494 A JPS6291494 A JP S6291494A
Authority
JP
Japan
Prior art keywords
single crystal
compound semiconductor
semiconductor single
gas
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60228901A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0319198B2 (enExample
Inventor
Junichi Nishizawa
潤一 西澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Research Development Corp of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Research Development Corp of Japan filed Critical Research Development Corp of Japan
Priority to JP60228901A priority Critical patent/JPS6291494A/ja
Priority to DE3635279A priority patent/DE3635279C2/de
Publication of JPS6291494A publication Critical patent/JPS6291494A/ja
Priority to US07/554,775 priority patent/US5074954A/en
Priority to US07/554,097 priority patent/US5035767A/en
Publication of JPH0319198B2 publication Critical patent/JPH0319198B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H10P14/24—
    • H10P14/3421—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y10S117/904—Laser beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP60228901A 1985-10-16 1985-10-16 化合物半導体単結晶成長方法及び装置 Granted JPS6291494A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP60228901A JPS6291494A (ja) 1985-10-16 1985-10-16 化合物半導体単結晶成長方法及び装置
DE3635279A DE3635279C2 (de) 1985-10-16 1986-10-16 Gasphasen-Epitaxieverfahren zur Herstellung eines Verbindungshalbleiter-Eiskristalls
US07/554,775 US5074954A (en) 1985-10-16 1990-07-19 Process and apparatus for growing compound semiconductor monocrystal
US07/554,097 US5035767A (en) 1985-10-16 1990-07-19 Process for growing compound semiconductor monocrystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60228901A JPS6291494A (ja) 1985-10-16 1985-10-16 化合物半導体単結晶成長方法及び装置

Publications (2)

Publication Number Publication Date
JPS6291494A true JPS6291494A (ja) 1987-04-25
JPH0319198B2 JPH0319198B2 (enExample) 1991-03-14

Family

ID=16883632

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60228901A Granted JPS6291494A (ja) 1985-10-16 1985-10-16 化合物半導体単結晶成長方法及び装置

Country Status (3)

Country Link
US (2) US5035767A (enExample)
JP (1) JPS6291494A (enExample)
DE (1) DE3635279C2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009539748A (ja) * 2006-06-09 2009-11-19 エス．オー．アイ．テック シリコン オン インシュレータ テクノロジーズ 三塩化ガリウムの大容量送達システム
JP2010510166A (ja) * 2006-11-22 2010-04-02 エス．オー．アイ．テック シリコン オン インシュレータ テクノロジーズ 三塩化ガリウムの噴射方式
JP2013060340A (ja) * 2011-09-14 2013-04-04 Tokuyama Corp ハイドライド気相エピタキシー装置およびアルミニウム系ｉｉｉ族窒化物単結晶を製造する方法
US8887650B2 (en) 2006-11-22 2014-11-18 Soitec Temperature-controlled purge gate valve for chemical vapor deposition chamber

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0630339B2 (ja) * 1984-07-16 1994-04-20 新技術事業団 ＧａＡｓ単結晶の製造方法
JPH0766906B2 (ja) * 1984-07-26 1995-07-19 新技術事業団 ＧａＡｓエピタキシャル成長方法
JPH02260417A (ja) * 1989-03-30 1990-10-23 Mitsubishi Electric Corp 半導体薄膜の結晶成長方法及びその装置
JPH0421780A (ja) * 1990-05-14 1992-01-24 Sharp Corp 気相成長装置
JPH05208900A (ja) * 1992-01-28 1993-08-20 Nisshin Steel Co Ltd 炭化ケイ素単結晶の成長装置
JPH05291140A (ja) * 1992-04-09 1993-11-05 Fujitsu Ltd 化合物半導体薄膜の成長方法
JPH0677140A (ja) * 1992-05-14 1994-03-18 Mitsubishi Electric Corp 気相結晶成長装置
US5451258A (en) * 1994-05-11 1995-09-19 Materials Research Corporation Apparatus and method for improved delivery of vaporized reactant gases to a reaction chamber
KR960015375B1 (ko) * 1994-06-08 1996-11-11 현대전자산업 주식회사 강유전체 박막 제조장치 및 그를 사용한 강유전체 박막 제조방법
JPH088194A (ja) * 1994-06-16 1996-01-12 Kishimoto Sangyo Kk 気相成長機構および熱処理機構における加熱装置
JP3442604B2 (ja) * 1996-02-15 2003-09-02 株式会社フジキン 混合ガスの供給方法及び混合ガス供給装置並びにこれらを備えた半導体製造装置
US5782980A (en) * 1996-05-14 1998-07-21 Advanced Micro Devices, Inc. Low pressure chemical vapor deposition apparatus including a process gas heating subsystem
US6706119B2 (en) * 2001-03-30 2004-03-16 Technologies And Devices International, Inc. Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPE
US20070032046A1 (en) * 2001-07-06 2007-02-08 Dmitriev Vladimir A Method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown thereby
US6936357B2 (en) * 2001-07-06 2005-08-30 Technologies And Devices International, Inc. Bulk GaN and ALGaN single crystals
US7501023B2 (en) * 2001-07-06 2009-03-10 Technologies And Devices, International, Inc. Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
US6613143B1 (en) * 2001-07-06 2003-09-02 Technologies And Devices International, Inc. Method for fabricating bulk GaN single crystals
US20060011135A1 (en) * 2001-07-06 2006-01-19 Dmitriev Vladimir A HVPE apparatus for simultaneously producing multiple wafers during a single epitaxial growth run
US9416464B1 (en) 2006-10-11 2016-08-16 Ostendo Technologies, Inc. Apparatus and methods for controlling gas flows in a HVPE reactor
US9481944B2 (en) 2006-11-22 2016-11-01 Soitec Gas injectors including a funnel- or wedge-shaped channel for chemical vapor deposition (CVD) systems and CVD systems with the same
US8585820B2 (en) * 2006-11-22 2013-11-19 Soitec Abatement of reaction gases from gallium nitride deposition
US9481943B2 (en) * 2006-11-22 2016-11-01 Soitec Gallium trichloride injection scheme
EP2066496B1 (en) * 2006-11-22 2013-04-10 Soitec Equipment for high volume manufacture of group iii-v semiconductor materials
US8382898B2 (en) 2006-11-22 2013-02-26 Soitec Methods for high volume manufacture of group III-V semiconductor materials
US20090223441A1 (en) * 2006-11-22 2009-09-10 Chantal Arena High volume delivery system for gallium trichloride
US20100180913A1 (en) * 2007-12-20 2010-07-22 Chantal Arena Methods for in-situ chamber cleaning process for high volume manufacture of semiconductor materials
US8486192B2 (en) 2010-09-30 2013-07-16 Soitec Thermalizing gas injectors for generating increased precursor gas, material deposition systems including such injectors, and related methods
US8133806B1 (en) 2010-09-30 2012-03-13 S.O.I.Tec Silicon On Insulator Technologies Systems and methods for forming semiconductor materials by atomic layer deposition

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS551137A (en) * 1978-06-20 1980-01-07 Mitsubishi Monsanto Chem Co Gaseous phase epitaxial breeding of monocrystalline layer of gallium arsenate
JPS5895696A (ja) * 1981-12-01 1983-06-07 Semiconductor Res Found 気相成長方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL252729A (enExample) * 1959-06-18
DE1900116C3 (de) * 1969-01-02 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen hxxochreiner, aus Silicium bestehender einkristalliner Schichten
US4368098A (en) * 1969-10-01 1983-01-11 Rockwell International Corporation Epitaxial composite and method of making
GB1319560A (en) * 1970-06-04 1973-06-06 North American Rockwell Epitaxial composite and method of making
US4010045A (en) * 1973-12-13 1977-03-01 Ruehrwein Robert A Process for production of III-V compound crystals
FR2403646A1 (fr) * 1977-09-16 1979-04-13 Anvar Procede de realisation d'un depot de compose semi-conducteur d'elements iii et v
FR2419585A1 (fr) * 1978-03-07 1979-10-05 Thomson Csf Procede d'obtention en phase gazeuse d'une couche epitaxiale de phosphure d'indium, et appareil d'application de ce procede
JPS6029295B2 (ja) * 1979-08-16 1985-07-10 舜平 山崎 非単結晶被膜形成法
US4488506A (en) * 1981-06-18 1984-12-18 Itt Industries, Inc. Metallization plant
JPS5969142A (ja) * 1982-10-13 1984-04-19 Toshiba Corp 膜形成方法及び膜形成装置
JPS59172717A (ja) * 1983-03-22 1984-09-29 Nec Corp 半導体気相成長装置
JPS60170234A (ja) * 1984-02-15 1985-09-03 Semiconductor Energy Lab Co Ltd 気相反応装置および気相反応被膜作製方法
GB2162207B (en) * 1984-07-26 1989-05-10 Japan Res Dev Corp Semiconductor crystal growth apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS551137A (en) * 1978-06-20 1980-01-07 Mitsubishi Monsanto Chem Co Gaseous phase epitaxial breeding of monocrystalline layer of gallium arsenate
JPS5895696A (ja) * 1981-12-01 1983-06-07 Semiconductor Res Found 気相成長方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009539748A (ja) * 2006-06-09 2009-11-19 エス．オー．アイ．テック シリコン オン インシュレータ テクノロジーズ 三塩化ガリウムの大容量送達システム
JP2014207459A (ja) * 2006-06-09 2014-10-30 ソイテック 三塩化ガリウムを製造するための大容量送達方法
JP2010510166A (ja) * 2006-11-22 2010-04-02 エス．オー．アイ．テック シリコン オン インシュレータ テクノロジーズ 三塩化ガリウムの噴射方式
US8887650B2 (en) 2006-11-22 2014-11-18 Soitec Temperature-controlled purge gate valve for chemical vapor deposition chamber
JP2013060340A (ja) * 2011-09-14 2013-04-04 Tokuyama Corp ハイドライド気相エピタキシー装置およびアルミニウム系ｉｉｉ族窒化物単結晶を製造する方法

Also Published As

Publication number Publication date
DE3635279A1 (de) 1987-05-07
US5074954A (en) 1991-12-24
DE3635279C2 (de) 1994-09-08
JPH0319198B2 (enExample) 1991-03-14
US5035767A (en) 1991-07-30

Similar Documents

Publication Publication Date Title
JPS6291494A (ja) 化合物半導体単結晶成長方法及び装置
US6048398A (en) Device for epitaxially growing objects
US20020170490A1 (en) Method and apparatus for growing aluminum nitride monocrystals
JPS6134929A (ja) 半導体結晶成長装置
EP0744768B1 (en) Device comprising films of beta-C3N4
KR20020095074A (ko) 단결정탄화실리콘박막의 제조방법 및 그 제조장치
JPH03196643A (ja) 気相成長法
RU2055948C1 (ru) Способ получения пленок сульфида кадмия
JPS60131968A (ja) 気相成長装置
JPS62138390A (ja) 分子線エピタキシヤル成長法
JPS61261294A (ja) 分子線エピタキシャル成長法
JPS61135111A (ja) 化合物半導体の気相成長方法
JPH10330199A (ja) ＧａＮ単結晶の製造方法
JPH01123411A (ja) 気相成長方法および装置
JPH04219393A (ja) 気相エピタキシャル成長方法及び装置
JPS59121918A (ja) 化合物の気相成長装置
JPS625634A (ja) 化合物半導体気相成長方法
JPH0547518B2 (enExample)
JPH02212399A (ja) 気相成長方法および装置
JPS62182195A (ja) ３−ｖ族化合物半導体の成長方法
JPS60262418A (ja) 半導体製造方法及び装置
Reid et al. The Role of Gas Phase Decomposition in the ALE Growth of III–V Compounds
JPH10287499A (ja) 単結晶の製造方法
JPH01313395A (ja) シリコンの気相成長方法
JPS61229321A (ja) 気相成長方法

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees