DE3635279C2 - Gasphasen-Epitaxieverfahren zur Herstellung eines Verbindungshalbleiter-Eiskristalls - Google Patents

Gasphasen-Epitaxieverfahren zur Herstellung eines Verbindungshalbleiter-Eiskristalls

Info

Publication number
DE3635279C2
DE3635279C2 DE3635279A DE3635279A DE3635279C2 DE 3635279 C2 DE3635279 C2 DE 3635279C2 DE 3635279 A DE3635279 A DE 3635279A DE 3635279 A DE3635279 A DE 3635279A DE 3635279 C2 DE3635279 C2 DE 3635279C2
Authority
DE
Germany
Prior art keywords
gas
temperature
reaction tube
gas phase
compound semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3635279A
Other languages
German (de)
English (en)
Other versions
DE3635279A1 (de
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Original Assignee
Research Development Corp of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Research Development Corp of Japan filed Critical Research Development Corp of Japan
Publication of DE3635279A1 publication Critical patent/DE3635279A1/de
Application granted granted Critical
Publication of DE3635279C2 publication Critical patent/DE3635279C2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H10P14/24—
    • H10P14/3421—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y10S117/904—Laser beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE3635279A 1985-10-16 1986-10-16 Gasphasen-Epitaxieverfahren zur Herstellung eines Verbindungshalbleiter-Eiskristalls Expired - Fee Related DE3635279C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60228901A JPS6291494A (ja) 1985-10-16 1985-10-16 化合物半導体単結晶成長方法及び装置

Publications (2)

Publication Number Publication Date
DE3635279A1 DE3635279A1 (de) 1987-05-07
DE3635279C2 true DE3635279C2 (de) 1994-09-08

Family

ID=16883632

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3635279A Expired - Fee Related DE3635279C2 (de) 1985-10-16 1986-10-16 Gasphasen-Epitaxieverfahren zur Herstellung eines Verbindungshalbleiter-Eiskristalls

Country Status (3)

Country Link
US (2) US5035767A (enExample)
JP (1) JPS6291494A (enExample)
DE (1) DE3635279C2 (enExample)

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JPH0630339B2 (ja) * 1984-07-16 1994-04-20 新技術事業団 ＧａＡｓ単結晶の製造方法
JPH0766906B2 (ja) * 1984-07-26 1995-07-19 新技術事業団 ＧａＡｓエピタキシャル成長方法
JPH02260417A (ja) * 1989-03-30 1990-10-23 Mitsubishi Electric Corp 半導体薄膜の結晶成長方法及びその装置
JPH0421780A (ja) * 1990-05-14 1992-01-24 Sharp Corp 気相成長装置
JPH05208900A (ja) * 1992-01-28 1993-08-20 Nisshin Steel Co Ltd 炭化ケイ素単結晶の成長装置
JPH05291140A (ja) * 1992-04-09 1993-11-05 Fujitsu Ltd 化合物半導体薄膜の成長方法
JPH0677140A (ja) * 1992-05-14 1994-03-18 Mitsubishi Electric Corp 気相結晶成長装置
US5451258A (en) * 1994-05-11 1995-09-19 Materials Research Corporation Apparatus and method for improved delivery of vaporized reactant gases to a reaction chamber
KR960015375B1 (ko) * 1994-06-08 1996-11-11 현대전자산업 주식회사 강유전체 박막 제조장치 및 그를 사용한 강유전체 박막 제조방법
JPH088194A (ja) * 1994-06-16 1996-01-12 Kishimoto Sangyo Kk 気相成長機構および熱処理機構における加熱装置
JP3442604B2 (ja) * 1996-02-15 2003-09-02 株式会社フジキン 混合ガスの供給方法及び混合ガス供給装置並びにこれらを備えた半導体製造装置
US5782980A (en) * 1996-05-14 1998-07-21 Advanced Micro Devices, Inc. Low pressure chemical vapor deposition apparatus including a process gas heating subsystem
US6706119B2 (en) * 2001-03-30 2004-03-16 Technologies And Devices International, Inc. Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPE
US20070032046A1 (en) * 2001-07-06 2007-02-08 Dmitriev Vladimir A Method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown thereby
US6936357B2 (en) * 2001-07-06 2005-08-30 Technologies And Devices International, Inc. Bulk GaN and ALGaN single crystals
US7501023B2 (en) * 2001-07-06 2009-03-10 Technologies And Devices, International, Inc. Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
US6613143B1 (en) * 2001-07-06 2003-09-02 Technologies And Devices International, Inc. Method for fabricating bulk GaN single crystals
US20060011135A1 (en) * 2001-07-06 2006-01-19 Dmitriev Vladimir A HVPE apparatus for simultaneously producing multiple wafers during a single epitaxial growth run
US20100242835A1 (en) * 2006-06-09 2010-09-30 S.O.I.T.E.C. Silicon On Insulator Technologies High volume delivery system for gallium trichloride
US9416464B1 (en) 2006-10-11 2016-08-16 Ostendo Technologies, Inc. Apparatus and methods for controlling gas flows in a HVPE reactor
US9481944B2 (en) 2006-11-22 2016-11-01 Soitec Gas injectors including a funnel- or wedge-shaped channel for chemical vapor deposition (CVD) systems and CVD systems with the same
US8545628B2 (en) * 2006-11-22 2013-10-01 Soitec Temperature-controlled purge gate valve for chemical vapor deposition chamber
US8585820B2 (en) * 2006-11-22 2013-11-19 Soitec Abatement of reaction gases from gallium nitride deposition
US9481943B2 (en) * 2006-11-22 2016-11-01 Soitec Gallium trichloride injection scheme
EP2066496B1 (en) * 2006-11-22 2013-04-10 Soitec Equipment for high volume manufacture of group iii-v semiconductor materials
KR101330156B1 (ko) * 2006-11-22 2013-12-20 소이텍 삼염화 갈륨 주입 구조
US8382898B2 (en) 2006-11-22 2013-02-26 Soitec Methods for high volume manufacture of group III-V semiconductor materials
US20090223441A1 (en) * 2006-11-22 2009-09-10 Chantal Arena High volume delivery system for gallium trichloride
US20100180913A1 (en) * 2007-12-20 2010-07-22 Chantal Arena Methods for in-situ chamber cleaning process for high volume manufacture of semiconductor materials
US8486192B2 (en) 2010-09-30 2013-07-16 Soitec Thermalizing gas injectors for generating increased precursor gas, material deposition systems including such injectors, and related methods
US8133806B1 (en) 2010-09-30 2012-03-13 S.O.I.Tec Silicon On Insulator Technologies Systems and methods for forming semiconductor materials by atomic layer deposition
JP5762900B2 (ja) * 2011-09-14 2015-08-12 株式会社トクヤマ ハイドライド気相エピタキシー装置およびアルミニウム系ｉｉｉ族窒化物単結晶を製造する方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL252729A (enExample) * 1959-06-18
DE1900116C3 (de) * 1969-01-02 1978-10-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen hxxochreiner, aus Silicium bestehender einkristalliner Schichten
US4368098A (en) * 1969-10-01 1983-01-11 Rockwell International Corporation Epitaxial composite and method of making
GB1319560A (en) * 1970-06-04 1973-06-06 North American Rockwell Epitaxial composite and method of making
US4010045A (en) * 1973-12-13 1977-03-01 Ruehrwein Robert A Process for production of III-V compound crystals
FR2403646A1 (fr) * 1977-09-16 1979-04-13 Anvar Procede de realisation d'un depot de compose semi-conducteur d'elements iii et v
FR2419585A1 (fr) * 1978-03-07 1979-10-05 Thomson Csf Procede d'obtention en phase gazeuse d'une couche epitaxiale de phosphure d'indium, et appareil d'application de ce procede
JPS551137A (en) * 1978-06-20 1980-01-07 Mitsubishi Monsanto Chem Co Gaseous phase epitaxial breeding of monocrystalline layer of gallium arsenate
JPS6029295B2 (ja) * 1979-08-16 1985-07-10 舜平 山崎 非単結晶被膜形成法
US4488506A (en) * 1981-06-18 1984-12-18 Itt Industries, Inc. Metallization plant
JPS5895696A (ja) * 1981-12-01 1983-06-07 Semiconductor Res Found 気相成長方法
JPS5969142A (ja) * 1982-10-13 1984-04-19 Toshiba Corp 膜形成方法及び膜形成装置
JPS59172717A (ja) * 1983-03-22 1984-09-29 Nec Corp 半導体気相成長装置
JPS60170234A (ja) * 1984-02-15 1985-09-03 Semiconductor Energy Lab Co Ltd 気相反応装置および気相反応被膜作製方法
GB2162207B (en) * 1984-07-26 1989-05-10 Japan Res Dev Corp Semiconductor crystal growth apparatus

Also Published As

Publication number Publication date
JPS6291494A (ja) 1987-04-25
DE3635279A1 (de) 1987-05-07
US5074954A (en) 1991-12-24
JPH0319198B2 (enExample) 1991-03-14
US5035767A (en) 1991-07-30

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee