JPS628876B2 - - Google Patents

Info

Publication number
JPS628876B2
JPS628876B2 JP55143947A JP14394780A JPS628876B2 JP S628876 B2 JPS628876 B2 JP S628876B2 JP 55143947 A JP55143947 A JP 55143947A JP 14394780 A JP14394780 A JP 14394780A JP S628876 B2 JPS628876 B2 JP S628876B2
Authority
JP
Japan
Prior art keywords
memory cell
blocks
data
memory
block
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55143947A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5769583A (en
Inventor
Hiroshi Iwahashi
Masamichi Asano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP14394780A priority Critical patent/JPS5769583A/ja
Priority to EP19860201618 priority patent/EP0214705B1/en
Priority to DE8181304660T priority patent/DE3176751D1/de
Priority to DE8686201618T priority patent/DE3177270D1/de
Priority to EP81304660A priority patent/EP0050005B1/en
Priority to US06/310,822 priority patent/US4477884A/en
Publication of JPS5769583A publication Critical patent/JPS5769583A/ja
Publication of JPS628876B2 publication Critical patent/JPS628876B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/30—Accessing single arrays
    • G11C29/34—Accessing multiple bits simultaneously
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits

Landscapes

  • Read Only Memory (AREA)
JP14394780A 1980-10-15 1980-10-15 Non_volatile semiconductor memory Granted JPS5769583A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP14394780A JPS5769583A (en) 1980-10-15 1980-10-15 Non_volatile semiconductor memory
EP19860201618 EP0214705B1 (en) 1980-10-15 1981-10-07 Semiconductor memory with improvend data programming time
DE8181304660T DE3176751D1 (en) 1980-10-15 1981-10-07 Semiconductor memory with improved data programming time
DE8686201618T DE3177270D1 (de) 1980-10-15 1981-10-07 Halbleiterspeicher mit datenprogrammierzeit.
EP81304660A EP0050005B1 (en) 1980-10-15 1981-10-07 Semiconductor memory with improved data programming time
US06/310,822 US4477884A (en) 1980-10-15 1981-10-13 Semiconductor memory with improved data programming time

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14394780A JPS5769583A (en) 1980-10-15 1980-10-15 Non_volatile semiconductor memory

Publications (2)

Publication Number Publication Date
JPS5769583A JPS5769583A (en) 1982-04-28
JPS628876B2 true JPS628876B2 (enrdf_load_stackoverflow) 1987-02-25

Family

ID=15350745

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14394780A Granted JPS5769583A (en) 1980-10-15 1980-10-15 Non_volatile semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5769583A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5136546A (en) * 1984-09-26 1992-08-04 Hitachi, Ltd. Semiconductor memory
JPS6180597A (ja) * 1984-09-26 1986-04-24 Hitachi Ltd 半導体記憶装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54107638A (en) * 1978-02-10 1979-08-23 Sanyo Electric Co Ltd Memory data readout circuit in semiconductor memory unit
JPS582438B2 (ja) * 1978-02-17 1983-01-17 三洋電機株式会社 不揮発性半導体メモリ装置

Also Published As

Publication number Publication date
JPS5769583A (en) 1982-04-28

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