JPS5769583A - Non_volatile semiconductor memory - Google Patents
Non_volatile semiconductor memoryInfo
- Publication number
- JPS5769583A JPS5769583A JP14394780A JP14394780A JPS5769583A JP S5769583 A JPS5769583 A JP S5769583A JP 14394780 A JP14394780 A JP 14394780A JP 14394780 A JP14394780 A JP 14394780A JP S5769583 A JPS5769583 A JP S5769583A
- Authority
- JP
- Japan
- Prior art keywords
- data
- potential
- fets
- addresses
- write
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/30—Accessing single arrays
- G11C29/34—Accessing multiple bits simultaneously
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/32—Timing circuits
Landscapes
- Read Only Memory (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14394780A JPS5769583A (en) | 1980-10-15 | 1980-10-15 | Non_volatile semiconductor memory |
| EP19860201618 EP0214705B1 (en) | 1980-10-15 | 1981-10-07 | Semiconductor memory with improvend data programming time |
| DE8181304660T DE3176751D1 (en) | 1980-10-15 | 1981-10-07 | Semiconductor memory with improved data programming time |
| DE8686201618T DE3177270D1 (de) | 1980-10-15 | 1981-10-07 | Halbleiterspeicher mit datenprogrammierzeit. |
| EP81304660A EP0050005B1 (en) | 1980-10-15 | 1981-10-07 | Semiconductor memory with improved data programming time |
| US06/310,822 US4477884A (en) | 1980-10-15 | 1981-10-13 | Semiconductor memory with improved data programming time |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14394780A JPS5769583A (en) | 1980-10-15 | 1980-10-15 | Non_volatile semiconductor memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5769583A true JPS5769583A (en) | 1982-04-28 |
| JPS628876B2 JPS628876B2 (enrdf_load_stackoverflow) | 1987-02-25 |
Family
ID=15350745
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14394780A Granted JPS5769583A (en) | 1980-10-15 | 1980-10-15 | Non_volatile semiconductor memory |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5769583A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4984212A (en) * | 1984-09-26 | 1991-01-08 | Hitachi, Ltd. | Semiconductor memory |
| US5136546A (en) * | 1984-09-26 | 1992-08-04 | Hitachi, Ltd. | Semiconductor memory |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54107638A (en) * | 1978-02-10 | 1979-08-23 | Sanyo Electric Co Ltd | Memory data readout circuit in semiconductor memory unit |
| JPS54110742A (en) * | 1978-02-17 | 1979-08-30 | Sanyo Electric Co Ltd | Nonvolatile semiconductor memory device |
-
1980
- 1980-10-15 JP JP14394780A patent/JPS5769583A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54107638A (en) * | 1978-02-10 | 1979-08-23 | Sanyo Electric Co Ltd | Memory data readout circuit in semiconductor memory unit |
| JPS54110742A (en) * | 1978-02-17 | 1979-08-30 | Sanyo Electric Co Ltd | Nonvolatile semiconductor memory device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4984212A (en) * | 1984-09-26 | 1991-01-08 | Hitachi, Ltd. | Semiconductor memory |
| US5136546A (en) * | 1984-09-26 | 1992-08-04 | Hitachi, Ltd. | Semiconductor memory |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS628876B2 (enrdf_load_stackoverflow) | 1987-02-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW330265B (en) | Semiconductor apparatus | |
| HK25687A (en) | An automatically programmable microprocessor | |
| JPS558135A (en) | Rewritable programable logic array | |
| JPS5771587A (en) | Semiconductor storing device | |
| ATE71763T1 (de) | Schaltungsanordnung und verfahren zum testen von speicherzellen. | |
| JPS56134390A (en) | Rom element | |
| EP0193210A3 (en) | Semiconductor memory device with a built-in test circuit | |
| KR870005473A (ko) | 반도체 프로그램어블 메모리 장치 | |
| JPS57111893A (en) | Relieving system of defective memory | |
| JPS5785255A (en) | Memory storage for integrated circuit | |
| JPS5525860A (en) | Memory system | |
| JPS5769583A (en) | Non_volatile semiconductor memory | |
| JPS5562588A (en) | Semiconductor memory circuit | |
| DE3684975D1 (de) | Verfahren und schaltungsanordnung zum inhaltsgesteuerten adressieren eines speichers. | |
| JPS5677968A (en) | Hierarchy memory element | |
| JPS5746385A (en) | Address discrimination method of semiconductor memory | |
| JPS5211829A (en) | Memory control unit | |
| JPH0438698A (ja) | 半導体メモリ | |
| EP0094645A3 (en) | Fault-tolerant circuitry for semiconductor memory | |
| JPS56114197A (en) | Semiconductor memory device | |
| JPS55129996A (en) | Write system of read-only memory | |
| JPS55105890A (en) | Memory control system | |
| JPS57198599A (en) | Memory device having redundancy | |
| JPS5564693A (en) | Buffer memory unit | |
| JPS5538679A (en) | Memory unit |