JPS628024B2 - - Google Patents

Info

Publication number
JPS628024B2
JPS628024B2 JP55175292A JP17529280A JPS628024B2 JP S628024 B2 JPS628024 B2 JP S628024B2 JP 55175292 A JP55175292 A JP 55175292A JP 17529280 A JP17529280 A JP 17529280A JP S628024 B2 JPS628024 B2 JP S628024B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
layer
semiconductor
groove
element isolation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55175292A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5799753A (en
Inventor
Satoshi Shinozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP55175292A priority Critical patent/JPS5799753A/ja
Priority to DE19813129558 priority patent/DE3129558A1/de
Publication of JPS5799753A publication Critical patent/JPS5799753A/ja
Priority to US06/507,557 priority patent/US4507849A/en
Publication of JPS628024B2 publication Critical patent/JPS628024B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/041—
    • H10W10/40—

Landscapes

  • Element Separation (AREA)
  • Weting (AREA)
JP55175292A 1980-07-28 1980-12-12 Manufacture of semiconductor integrated circuit Granted JPS5799753A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP55175292A JPS5799753A (en) 1980-12-12 1980-12-12 Manufacture of semiconductor integrated circuit
DE19813129558 DE3129558A1 (de) 1980-07-28 1981-07-27 Verfahren zur herstellung einer integrierten halbleiterschaltung
US06/507,557 US4507849A (en) 1980-07-28 1983-06-24 Method of making isolation grooves by over-filling with polycrystalline silicon having a difference in impurity concentration inside the grooves followed by etching off the overfill based upon this difference

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55175292A JPS5799753A (en) 1980-12-12 1980-12-12 Manufacture of semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5799753A JPS5799753A (en) 1982-06-21
JPS628024B2 true JPS628024B2 (OSRAM) 1987-02-20

Family

ID=15993558

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55175292A Granted JPS5799753A (en) 1980-07-28 1980-12-12 Manufacture of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5799753A (OSRAM)

Also Published As

Publication number Publication date
JPS5799753A (en) 1982-06-21

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