JPS6276563A - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置

Info

Publication number
JPS6276563A
JPS6276563A JP21575885A JP21575885A JPS6276563A JP S6276563 A JPS6276563 A JP S6276563A JP 21575885 A JP21575885 A JP 21575885A JP 21575885 A JP21575885 A JP 21575885A JP S6276563 A JPS6276563 A JP S6276563A
Authority
JP
Japan
Prior art keywords
layer
impurity
region
memory device
floating gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21575885A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0574949B2 (https=
Inventor
Tetsuo Fujii
哲夫 藤井
Toshio Sakakibara
利夫 榊原
Nobuyoshi Sakakibara
伸義 榊原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP21575885A priority Critical patent/JPS6276563A/ja
Publication of JPS6276563A publication Critical patent/JPS6276563A/ja
Publication of JPH0574949B2 publication Critical patent/JPH0574949B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Non-Volatile Memory (AREA)
JP21575885A 1985-09-28 1985-09-28 不揮発性半導体記憶装置 Granted JPS6276563A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21575885A JPS6276563A (ja) 1985-09-28 1985-09-28 不揮発性半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21575885A JPS6276563A (ja) 1985-09-28 1985-09-28 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS6276563A true JPS6276563A (ja) 1987-04-08
JPH0574949B2 JPH0574949B2 (https=) 1993-10-19

Family

ID=16677738

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21575885A Granted JPS6276563A (ja) 1985-09-28 1985-09-28 不揮発性半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS6276563A (https=)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62269363A (ja) * 1986-05-19 1987-11-21 Nec Corp 半導体記憶装置の製造方法
JPS63284867A (ja) * 1987-05-18 1988-11-22 Toshiba Corp 半導体記憶装置
US5049956A (en) * 1989-07-13 1991-09-17 Kabushiki Kaisha Toshiba Memory cell structure of semiconductor memory device
US5258634A (en) * 1991-05-17 1993-11-02 United Microelectronics Corporation Electrically erasable read only memory cell array having elongated control gate in a trench
US5350937A (en) * 1991-10-08 1994-09-27 Semiconductor Energy Laboratory Co., Ltd. Non-volatile memory device having a floating gate
EP0601747A3 (en) * 1992-11-26 1995-01-18 Nippon Electric Co Non-volatile semiconductor device and method of manufacture.
US5675161A (en) * 1995-03-28 1997-10-07 Thomas; Mammen Channel accelerated tunneling electron cell, with a select region incorporated, for high density low power applications
KR100247258B1 (ko) * 1990-11-08 2000-03-15 요트.게.아. 롤페즈 Eeprom 셀
KR100490654B1 (ko) * 1997-12-30 2006-08-18 주식회사 하이닉스반도체 수직형이이피롬셀및그제조방법
JP2006521024A (ja) * 2003-03-20 2006-09-14 フリースケール セミコンダクター インコーポレイテッド 多ビット不揮発性記憶デバイス及びその形成方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62269363A (ja) * 1986-05-19 1987-11-21 Nec Corp 半導体記憶装置の製造方法
JPS63284867A (ja) * 1987-05-18 1988-11-22 Toshiba Corp 半導体記憶装置
US5049956A (en) * 1989-07-13 1991-09-17 Kabushiki Kaisha Toshiba Memory cell structure of semiconductor memory device
KR100247258B1 (ko) * 1990-11-08 2000-03-15 요트.게.아. 롤페즈 Eeprom 셀
US5258634A (en) * 1991-05-17 1993-11-02 United Microelectronics Corporation Electrically erasable read only memory cell array having elongated control gate in a trench
US5350937A (en) * 1991-10-08 1994-09-27 Semiconductor Energy Laboratory Co., Ltd. Non-volatile memory device having a floating gate
US5633519A (en) * 1991-10-08 1997-05-27 Semiconductor Energy Laboratory Co., Ltd. Non-volatile floating gate semiconductor device
EP0601747A3 (en) * 1992-11-26 1995-01-18 Nippon Electric Co Non-volatile semiconductor device and method of manufacture.
US5675161A (en) * 1995-03-28 1997-10-07 Thomas; Mammen Channel accelerated tunneling electron cell, with a select region incorporated, for high density low power applications
KR100490654B1 (ko) * 1997-12-30 2006-08-18 주식회사 하이닉스반도체 수직형이이피롬셀및그제조방법
JP2006521024A (ja) * 2003-03-20 2006-09-14 フリースケール セミコンダクター インコーポレイテッド 多ビット不揮発性記憶デバイス及びその形成方法

Also Published As

Publication number Publication date
JPH0574949B2 (https=) 1993-10-19

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