JPS6276563A - 不揮発性半導体記憶装置 - Google Patents
不揮発性半導体記憶装置Info
- Publication number
- JPS6276563A JPS6276563A JP21575885A JP21575885A JPS6276563A JP S6276563 A JPS6276563 A JP S6276563A JP 21575885 A JP21575885 A JP 21575885A JP 21575885 A JP21575885 A JP 21575885A JP S6276563 A JPS6276563 A JP S6276563A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- impurity
- region
- memory device
- floating gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 239000012535 impurity Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 14
- 230000004888 barrier function Effects 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 8
- 238000005192 partition Methods 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 8
- 230000010354 integration Effects 0.000 abstract description 5
- 230000005055 memory storage Effects 0.000 abstract 1
- 238000000638 solvent extraction Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- HJELPJZFDFLHEY-UHFFFAOYSA-N silicide(1-) Chemical compound [Si-] HJELPJZFDFLHEY-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21575885A JPS6276563A (ja) | 1985-09-28 | 1985-09-28 | 不揮発性半導体記憶装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21575885A JPS6276563A (ja) | 1985-09-28 | 1985-09-28 | 不揮発性半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6276563A true JPS6276563A (ja) | 1987-04-08 |
| JPH0574949B2 JPH0574949B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-10-19 |
Family
ID=16677738
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21575885A Granted JPS6276563A (ja) | 1985-09-28 | 1985-09-28 | 不揮発性半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6276563A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62269363A (ja) * | 1986-05-19 | 1987-11-21 | Nec Corp | 半導体記憶装置の製造方法 |
| JPS63284867A (ja) * | 1987-05-18 | 1988-11-22 | Toshiba Corp | 半導体記憶装置 |
| US5049956A (en) * | 1989-07-13 | 1991-09-17 | Kabushiki Kaisha Toshiba | Memory cell structure of semiconductor memory device |
| US5258634A (en) * | 1991-05-17 | 1993-11-02 | United Microelectronics Corporation | Electrically erasable read only memory cell array having elongated control gate in a trench |
| US5350937A (en) * | 1991-10-08 | 1994-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Non-volatile memory device having a floating gate |
| EP0601747A3 (en) * | 1992-11-26 | 1995-01-18 | Nippon Electric Co | Non-volatile semiconductor device and method of manufacture. |
| US5675161A (en) * | 1995-03-28 | 1997-10-07 | Thomas; Mammen | Channel accelerated tunneling electron cell, with a select region incorporated, for high density low power applications |
| KR100247258B1 (ko) * | 1990-11-08 | 2000-03-15 | 요트.게.아. 롤페즈 | Eeprom 셀 |
| KR100490654B1 (ko) * | 1997-12-30 | 2006-08-18 | 주식회사 하이닉스반도체 | 수직형이이피롬셀및그제조방법 |
| JP2006521024A (ja) * | 2003-03-20 | 2006-09-14 | フリースケール セミコンダクター インコーポレイテッド | 多ビット不揮発性記憶デバイス及びその形成方法 |
-
1985
- 1985-09-28 JP JP21575885A patent/JPS6276563A/ja active Granted
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62269363A (ja) * | 1986-05-19 | 1987-11-21 | Nec Corp | 半導体記憶装置の製造方法 |
| JPS63284867A (ja) * | 1987-05-18 | 1988-11-22 | Toshiba Corp | 半導体記憶装置 |
| US5049956A (en) * | 1989-07-13 | 1991-09-17 | Kabushiki Kaisha Toshiba | Memory cell structure of semiconductor memory device |
| KR100247258B1 (ko) * | 1990-11-08 | 2000-03-15 | 요트.게.아. 롤페즈 | Eeprom 셀 |
| US5258634A (en) * | 1991-05-17 | 1993-11-02 | United Microelectronics Corporation | Electrically erasable read only memory cell array having elongated control gate in a trench |
| US5350937A (en) * | 1991-10-08 | 1994-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Non-volatile memory device having a floating gate |
| US5633519A (en) * | 1991-10-08 | 1997-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Non-volatile floating gate semiconductor device |
| EP0601747A3 (en) * | 1992-11-26 | 1995-01-18 | Nippon Electric Co | Non-volatile semiconductor device and method of manufacture. |
| US5675161A (en) * | 1995-03-28 | 1997-10-07 | Thomas; Mammen | Channel accelerated tunneling electron cell, with a select region incorporated, for high density low power applications |
| KR100490654B1 (ko) * | 1997-12-30 | 2006-08-18 | 주식회사 하이닉스반도체 | 수직형이이피롬셀및그제조방법 |
| JP2006521024A (ja) * | 2003-03-20 | 2006-09-14 | フリースケール セミコンダクター インコーポレイテッド | 多ビット不揮発性記憶デバイス及びその形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0574949B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-10-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |