JPS6273673A - 電界効果トランジスタの製造方法 - Google Patents

電界効果トランジスタの製造方法

Info

Publication number
JPS6273673A
JPS6273673A JP21220185A JP21220185A JPS6273673A JP S6273673 A JPS6273673 A JP S6273673A JP 21220185 A JP21220185 A JP 21220185A JP 21220185 A JP21220185 A JP 21220185A JP S6273673 A JPS6273673 A JP S6273673A
Authority
JP
Japan
Prior art keywords
metal film
gate electrode
active layer
metallic film
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21220185A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0257340B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Takeshi Nogami
毅 野上
Hiroshi Iwasaki
博 岩崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP21220185A priority Critical patent/JPS6273673A/ja
Publication of JPS6273673A publication Critical patent/JPS6273673A/ja
Publication of JPH0257340B2 publication Critical patent/JPH0257340B2/ja
Priority to US07/688,711 priority patent/US5187111A/en
Priority to US07/941,151 priority patent/US5405792A/en
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP21220185A 1985-09-27 1985-09-27 電界効果トランジスタの製造方法 Granted JPS6273673A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP21220185A JPS6273673A (ja) 1985-09-27 1985-09-27 電界効果トランジスタの製造方法
US07/688,711 US5187111A (en) 1985-09-27 1991-04-23 Method of manufacturing Schottky barrier gate FET
US07/941,151 US5405792A (en) 1985-09-27 1992-09-04 Method of manufacturing schottky barrier gate type fet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21220185A JPS6273673A (ja) 1985-09-27 1985-09-27 電界効果トランジスタの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP61198925A Division JP2567845B2 (ja) 1986-08-27 1986-08-27 電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS6273673A true JPS6273673A (ja) 1987-04-04
JPH0257340B2 JPH0257340B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-12-04

Family

ID=16618592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21220185A Granted JPS6273673A (ja) 1985-09-27 1985-09-27 電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS6273673A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0244840A3 (en) * 1986-05-09 1988-01-07 Kabushiki Kaisha Toshiba Method of manufacturing mes fet
JPS6445175A (en) * 1987-08-14 1989-02-17 Nippon Telegraph & Telephone Gallium arsenide field-effect transistor
JPS6445174A (en) * 1987-08-13 1989-02-17 Nippon Telegraph & Telephone Field-effect transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0244840A3 (en) * 1986-05-09 1988-01-07 Kabushiki Kaisha Toshiba Method of manufacturing mes fet
US5143856A (en) * 1986-05-09 1992-09-01 Kabushiki Kaisha Toshiba Method of manufacturing MES FET
JPS6445174A (en) * 1987-08-13 1989-02-17 Nippon Telegraph & Telephone Field-effect transistor
JPS6445175A (en) * 1987-08-14 1989-02-17 Nippon Telegraph & Telephone Gallium arsenide field-effect transistor

Also Published As

Publication number Publication date
JPH0257340B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-12-04

Similar Documents

Publication Publication Date Title
KR920002090B1 (ko) 전계효과 트랜지스터의 제조방법
JPS6086866A (ja) 電界効果トランジスタおよびその製造方法
JPH0235462B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0621099A (ja) ＧａＡｓ ＭＥＳＦＥＴの製造方法
US4586063A (en) Schottky barrier gate FET including tungsten-aluminum alloy
JPS6273673A (ja) 電界効果トランジスタの製造方法
JPH0543291B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0212015B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2567845B2 (ja) 電界効果トランジスタの製造方法
JPS59181066A (ja) 半導体装置の製造方法
JPH0810706B2 (ja) 電界効果トランジスタの製造方法
JP2889240B2 (ja) 化合物半導体装置及びその製造方法
JPH01251669A (ja) 電界効果トランジスタの製造方法
JP3139208B2 (ja) 電界効果トランジスタの製造方法
JPH02249229A (ja) 半導体装置の製造方法
JPH028457B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6038883A (ja) ショットキゲ−ト型ｆｅｔの製造方法
JPS60777A (ja) 半導体装置の製造方法
JPS62206886A (ja) 化合物半導体電界効果トランジスタの製造方法
JPH03239322A (ja) 半導体装置およびその製造方法
JPH0352238A (ja) 化合物半導体装置の製造方法
JPS58202577A (ja) 電界効果トランジスタの製造方法
JPS6237971A (ja) シヨツトキ−障壁ゲ−ト電界効果トランジスタの製造方法
JPS63246870A (ja) 化合物半導体装置及び製造方法
JPS63232372A (ja) 電界効果型トランジスタの製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term