JPS6260699B2 - - Google Patents

Info

Publication number
JPS6260699B2
JPS6260699B2 JP58082683A JP8268383A JPS6260699B2 JP S6260699 B2 JPS6260699 B2 JP S6260699B2 JP 58082683 A JP58082683 A JP 58082683A JP 8268383 A JP8268383 A JP 8268383A JP S6260699 B2 JPS6260699 B2 JP S6260699B2
Authority
JP
Japan
Prior art keywords
ion beam
workpiece
ion
image
scanning range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58082683A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59208830A (ja
Inventor
Akira Shimase
Hiroshi Yamaguchi
Takeoki Myauchi
Hideshi Kadooka
Mikio Ppongo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58082683A priority Critical patent/JPS59208830A/ja
Publication of JPS59208830A publication Critical patent/JPS59208830A/ja
Publication of JPS6260699B2 publication Critical patent/JPS6260699B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
  • Drying Of Semiconductors (AREA)
JP58082683A 1983-05-13 1983-05-13 イオンビ−ム加工方法およびその装置 Granted JPS59208830A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58082683A JPS59208830A (ja) 1983-05-13 1983-05-13 イオンビ−ム加工方法およびその装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58082683A JPS59208830A (ja) 1983-05-13 1983-05-13 イオンビ−ム加工方法およびその装置

Publications (2)

Publication Number Publication Date
JPS59208830A JPS59208830A (ja) 1984-11-27
JPS6260699B2 true JPS6260699B2 (enrdf_load_stackoverflow) 1987-12-17

Family

ID=13781216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58082683A Granted JPS59208830A (ja) 1983-05-13 1983-05-13 イオンビ−ム加工方法およびその装置

Country Status (1)

Country Link
JP (1) JPS59208830A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7010860B2 (en) 1998-08-26 2006-03-14 Alterra Holdings Corporation Hand-held cutting device

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2539359B2 (ja) * 1985-03-27 1996-10-02 株式会社日立製作所 半導体装置へのイオンビ−ム加工方法およびその装置
JPH07105321B2 (ja) * 1985-03-29 1995-11-13 株式会社日立製作所 イオンビ−ム加工方法およびその装置
AT386297B (de) * 1985-09-11 1988-07-25 Ims Ionen Mikrofab Syst Ionenstrahlgeraet und verfahren zur ausfuehrung von aenderungen, insbes. reparaturen an substraten unter verwendung eines ionenstrahlgeraetes
JPS6281640A (ja) * 1985-10-07 1987-04-15 Seiko Instr & Electronics Ltd マスクリペア装置
US6753253B1 (en) * 1986-06-18 2004-06-22 Hitachi, Ltd. Method of making wiring and logic corrections on a semiconductor device by use of focused ion beams
JPS63141060A (ja) * 1986-12-03 1988-06-13 Seiko Instr & Electronics Ltd マスク修正方法
JPS63301952A (ja) * 1986-12-26 1988-12-08 Seiko Instr & Electronics Ltd イオンビーム加工方法およびその装置
JP2810370B2 (ja) * 1988-01-12 1998-10-15 株式会社 日立製作所 集束イオンビーム加工方法
JP2710967B2 (ja) * 1988-11-22 1998-02-10 株式会社日立製作所 集積回路装置の製造方法
JPH0364915A (ja) * 1989-08-02 1991-03-20 Nec Corp 絶縁膜のエッチング方法
JP5177609B2 (ja) * 2005-10-04 2013-04-03 キヤノン株式会社 被加工物の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150225A (en) * 1979-05-11 1980-11-22 Hitachi Ltd Method of correcting white spot fault of photomask
JPS5856332A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd マスクの欠陥修正方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7010860B2 (en) 1998-08-26 2006-03-14 Alterra Holdings Corporation Hand-held cutting device

Also Published As

Publication number Publication date
JPS59208830A (ja) 1984-11-27

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