JPS59208830A - イオンビ−ム加工方法およびその装置 - Google Patents

イオンビ−ム加工方法およびその装置

Info

Publication number
JPS59208830A
JPS59208830A JP58082683A JP8268383A JPS59208830A JP S59208830 A JPS59208830 A JP S59208830A JP 58082683 A JP58082683 A JP 58082683A JP 8268383 A JP8268383 A JP 8268383A JP S59208830 A JPS59208830 A JP S59208830A
Authority
JP
Japan
Prior art keywords
ion beam
workpiece
ion
scanning
controller
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58082683A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6260699B2 (enrdf_load_stackoverflow
Inventor
Akira Shimase
朗 嶋瀬
Hiroshi Yamaguchi
博司 山口
Takeoki Miyauchi
宮内　建興
Hideshi Kadooka
門岡　英志
Mikio Hongo
幹雄 本郷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58082683A priority Critical patent/JPS59208830A/ja
Publication of JPS59208830A publication Critical patent/JPS59208830A/ja
Publication of JPS6260699B2 publication Critical patent/JPS6260699B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
  • Drying Of Semiconductors (AREA)
JP58082683A 1983-05-13 1983-05-13 イオンビ−ム加工方法およびその装置 Granted JPS59208830A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58082683A JPS59208830A (ja) 1983-05-13 1983-05-13 イオンビ−ム加工方法およびその装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58082683A JPS59208830A (ja) 1983-05-13 1983-05-13 イオンビ−ム加工方法およびその装置

Publications (2)

Publication Number Publication Date
JPS59208830A true JPS59208830A (ja) 1984-11-27
JPS6260699B2 JPS6260699B2 (enrdf_load_stackoverflow) 1987-12-17

Family

ID=13781216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58082683A Granted JPS59208830A (ja) 1983-05-13 1983-05-13 イオンビ−ム加工方法およびその装置

Country Status (1)

Country Link
JP (1) JPS59208830A (enrdf_load_stackoverflow)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61220330A (ja) * 1985-03-27 1986-09-30 Hitachi Ltd 半導体装置へのイオンビ−ム加工方法およびその装置
JPS61224319A (ja) * 1985-03-29 1986-10-06 Hitachi Ltd イオンビ−ム加工方法およびその装置
JPS6281640A (ja) * 1985-10-07 1987-04-15 Seiko Instr & Electronics Ltd マスクリペア装置
JPS63141060A (ja) * 1986-12-03 1988-06-13 Seiko Instr & Electronics Ltd マスク修正方法
JPS63301952A (ja) * 1986-12-26 1988-12-08 Seiko Instr & Electronics Ltd イオンビーム加工方法およびその装置
JPH01181529A (ja) * 1988-01-12 1989-07-19 Hitachi Ltd 集束イオンビーム加工方法とその装置
JPH0364915A (ja) * 1989-08-02 1991-03-20 Nec Corp 絶縁膜のエッチング方法
JPH0619546B2 (ja) * 1985-09-11 1994-03-16 ゲルハルト ステンゲル イオン線装置及びイオン線装置を使用して基体を変更する方法
US5350649A (en) * 1988-11-22 1994-09-27 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6753253B1 (en) * 1986-06-18 2004-06-22 Hitachi, Ltd. Method of making wiring and logic corrections on a semiconductor device by use of focused ion beams
JP2007103173A (ja) * 2005-10-04 2007-04-19 Canon Inc イオンビーム加工方法及び加工装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6052909A (en) 1998-08-26 2000-04-25 Gardner; Mark T. Hand-held oval cutting device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150225A (en) * 1979-05-11 1980-11-22 Hitachi Ltd Method of correcting white spot fault of photomask
JPS5856332A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd マスクの欠陥修正方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150225A (en) * 1979-05-11 1980-11-22 Hitachi Ltd Method of correcting white spot fault of photomask
JPS5856332A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd マスクの欠陥修正方法

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61220330A (ja) * 1985-03-27 1986-09-30 Hitachi Ltd 半導体装置へのイオンビ−ム加工方法およびその装置
JPS61224319A (ja) * 1985-03-29 1986-10-06 Hitachi Ltd イオンビ−ム加工方法およびその装置
JPH0619546B2 (ja) * 1985-09-11 1994-03-16 ゲルハルト ステンゲル イオン線装置及びイオン線装置を使用して基体を変更する方法
JPS6281640A (ja) * 1985-10-07 1987-04-15 Seiko Instr & Electronics Ltd マスクリペア装置
US6753253B1 (en) * 1986-06-18 2004-06-22 Hitachi, Ltd. Method of making wiring and logic corrections on a semiconductor device by use of focused ion beams
JPS63141060A (ja) * 1986-12-03 1988-06-13 Seiko Instr & Electronics Ltd マスク修正方法
JPS63301952A (ja) * 1986-12-26 1988-12-08 Seiko Instr & Electronics Ltd イオンビーム加工方法およびその装置
JPH01181529A (ja) * 1988-01-12 1989-07-19 Hitachi Ltd 集束イオンビーム加工方法とその装置
US5830606A (en) * 1988-11-22 1998-11-03 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US5484671A (en) * 1988-11-22 1996-01-16 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US5350649A (en) * 1988-11-22 1994-09-27 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US5948574A (en) * 1988-11-22 1999-09-07 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6106981A (en) * 1988-11-22 2000-08-22 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6420075B1 (en) 1988-11-22 2002-07-16 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6458497B2 (en) 1988-11-22 2002-10-01 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6548213B2 (en) 1988-11-22 2003-04-15 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6733933B2 (en) 1988-11-22 2004-05-11 Renesas Technology Corporation Mask for manufacturing semiconductor device and method of manufacture thereof
US7008736B2 (en) 1988-11-22 2006-03-07 Renesas Technology Corp. Semiconductor integrated circuit device fabrication method using a mask having a phase shifting film covering region and an opening region
JPH0364915A (ja) * 1989-08-02 1991-03-20 Nec Corp 絶縁膜のエッチング方法
JP2007103173A (ja) * 2005-10-04 2007-04-19 Canon Inc イオンビーム加工方法及び加工装置

Also Published As

Publication number Publication date
JPS6260699B2 (enrdf_load_stackoverflow) 1987-12-17

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