JPS6255301B2 - - Google Patents
Info
- Publication number
- JPS6255301B2 JPS6255301B2 JP55040505A JP4050580A JPS6255301B2 JP S6255301 B2 JPS6255301 B2 JP S6255301B2 JP 55040505 A JP55040505 A JP 55040505A JP 4050580 A JP4050580 A JP 4050580A JP S6255301 B2 JPS6255301 B2 JP S6255301B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- package
- semiconductor device
- organic material
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 58
- 239000008188 pellet Substances 0.000 claims description 30
- 239000011521 glass Substances 0.000 claims description 20
- 239000011368 organic material Substances 0.000 claims description 20
- 239000000919 ceramic Substances 0.000 claims description 18
- 239000003795 chemical substances by application Substances 0.000 claims description 12
- 230000006386 memory function Effects 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 239000009719 polyimide resin Substances 0.000 claims description 4
- 238000007789 sealing Methods 0.000 description 17
- 238000002844 melting Methods 0.000 description 10
- 230000008018 melting Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000007257 malfunction Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910015363 Au—Sn Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000006023 eutectic alloy Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000000499 gel Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- LBDSXVIYZYSRII-IGMARMGPSA-N alpha-particle Chemical compound [4He+2] LBDSXVIYZYSRII-IGMARMGPSA-N 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000156 glass melt Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- XUAIYERAFHFMGZ-UHFFFAOYSA-N isoindolo[4,5-h]quinazoline-6,8-dione Chemical compound C1=C2C=NC=C2C2=CC=C3C(=O)NC(=O)N=C3C2=C1 XUAIYERAFHFMGZ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
- H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/15165—Monolayer substrate
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
- H01L2924/1617—Cavity coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4050580A JPS56137658A (en) | 1980-03-31 | 1980-03-31 | Semiconductor device |
DE19813112564 DE3112564A1 (de) | 1980-03-31 | 1981-03-30 | Gekapselte halbleiteranordnung |
US06/626,200 US4630095A (en) | 1980-03-31 | 1984-06-29 | Packaged semiconductor device structure including getter material for decreasing gas from a protective organic covering |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4050580A JPS56137658A (en) | 1980-03-31 | 1980-03-31 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56137658A JPS56137658A (en) | 1981-10-27 |
JPS6255301B2 true JPS6255301B2 (US07922777-20110412-C00004.png) | 1987-11-19 |
Family
ID=12582402
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4050580A Granted JPS56137658A (en) | 1980-03-31 | 1980-03-31 | Semiconductor device |
Country Status (3)
Country | Link |
---|---|
US (1) | US4630095A (US07922777-20110412-C00004.png) |
JP (1) | JPS56137658A (US07922777-20110412-C00004.png) |
DE (1) | DE3112564A1 (US07922777-20110412-C00004.png) |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2538618B1 (fr) * | 1982-12-28 | 1986-03-07 | Inf Milit Spatiale Aeronaut | Boitier pour composant electronique comportant un element fixant l'humidite |
ATE38920T1 (de) * | 1984-05-02 | 1988-12-15 | Gte Prod Corp | In einem gehaeuse montiertes integriertes schaltungsplaettchen. |
DE3575497D1 (de) * | 1984-05-02 | 1990-02-22 | Gte Prod Corp | Verfahren zum herstellen eines gekapselten ic-plaettchens. |
JPH0237752Y2 (US07922777-20110412-C00004.png) * | 1985-05-21 | 1990-10-12 | ||
JPH0783075B2 (ja) * | 1986-03-14 | 1995-09-06 | 三菱電機株式会社 | 半導体装置の製造方法 |
US4769345A (en) * | 1987-03-12 | 1988-09-06 | Olin Corporation | Process for producing a hermetically sealed package for an electrical component containing a low amount of oxygen and water vapor |
US4958216A (en) * | 1987-03-23 | 1990-09-18 | Kyocera Corporation | Package for housing semiconductor elements |
US4961106A (en) * | 1987-03-27 | 1990-10-02 | Olin Corporation | Metal packages having improved thermal dissipation |
US5365113A (en) * | 1987-06-30 | 1994-11-15 | Hitachi, Ltd. | Semiconductor device |
US5184208A (en) * | 1987-06-30 | 1993-02-02 | Hitachi, Ltd. | Semiconductor device |
JPH0727921B2 (ja) * | 1987-07-31 | 1995-03-29 | 日本電気株式会社 | 半導体装置の製造方法 |
US4953002A (en) * | 1988-03-31 | 1990-08-28 | Honeywell Inc. | Semiconductor device housing with magnetic field protection |
US5041396A (en) * | 1989-07-18 | 1991-08-20 | Vlsi Technology, Inc. | Reusable package for holding a semiconductor chip and method for reusing the package |
US5196919A (en) * | 1990-12-07 | 1993-03-23 | Kyocera America, Inc. | Use of a contamination shield during the manufacture of semiconductor packages |
US5308533A (en) * | 1991-11-29 | 1994-05-03 | The United States Of America As Represented By The Secretary Of The Air Force | Aerogel mesh getter |
US5360572A (en) * | 1991-11-29 | 1994-11-01 | The United States Of America As Represented By The Secretary Of The Air Force | Aerogel mesh getter |
US5244707A (en) * | 1992-01-10 | 1993-09-14 | Shores A Andrew | Enclosure for electronic devices |
US5734226A (en) * | 1992-08-12 | 1998-03-31 | Micron Technology, Inc. | Wire-bonded getters useful in evacuated displays |
JP2522186B2 (ja) * | 1993-10-15 | 1996-08-07 | 日本電気株式会社 | 半導体パッケ―ジ |
US5883429A (en) * | 1995-04-25 | 1999-03-16 | Siemens Aktiengesellschaft | Chip cover |
US5939785A (en) * | 1996-04-12 | 1999-08-17 | Texas Instruments Incorporated | Micromechanical device including time-release passivant |
US5929515A (en) * | 1997-10-01 | 1999-07-27 | The Charles Stark Draper Laboratory, Inc. | Gettering enclosure for a semiconductor device |
US6093302A (en) * | 1998-01-05 | 2000-07-25 | Combimatrix Corporation | Electrochemical solid phase synthesis |
AU2003200747B2 (en) * | 1998-01-05 | 2006-11-23 | Combimatrix Corporation | Gettering device for ion capture |
CA2251251A1 (en) * | 1998-10-21 | 2000-04-21 | Hualon Microelectronics Corporation | A construction method of hybrid integrated circuit with charge coupled device for image sensing (ccdis) |
US7091605B2 (en) * | 2001-09-21 | 2006-08-15 | Eastman Kodak Company | Highly moisture-sensitive electronic device element and method for fabrication |
US6543617B2 (en) * | 2001-03-09 | 2003-04-08 | International Business Machines Corporation | Packaged radiation sensitive coated workpiece process for making and method of storing same |
TW583049B (en) * | 2001-07-20 | 2004-04-11 | Getters Spa | Support with integrated deposit of gas absorbing material for manufacturing microelectronic, microoptoelectronic or micromechanical devices |
TW533188B (en) * | 2001-07-20 | 2003-05-21 | Getters Spa | Support for microelectronic, microoptoelectronic or micromechanical devices |
US6929974B2 (en) * | 2002-10-18 | 2005-08-16 | Motorola, Inc. | Feedthrough design and method for a hermetically sealed microdevice |
JP2005129735A (ja) * | 2003-10-23 | 2005-05-19 | Fujitsu Media Device Kk | 電子部品 |
US7871660B2 (en) * | 2003-11-14 | 2011-01-18 | Saes Getters, S.P.A. | Preparation of getter surfaces using caustic chemicals |
US7042076B2 (en) * | 2004-03-09 | 2006-05-09 | Northrop Grumman Corporation | Vacuum sealed microdevice packaging with getters |
JP4885426B2 (ja) * | 2004-03-12 | 2012-02-29 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置、半導体装置及びその製造方法 |
US7211881B2 (en) * | 2004-03-24 | 2007-05-01 | Hewlett-Packard Development Company, L.P. | Structure for containing desiccant |
JP4453546B2 (ja) * | 2004-12-22 | 2010-04-21 | 日産自動車株式会社 | パッケージ素子 |
WO2006067730A2 (en) * | 2004-12-22 | 2006-06-29 | Koninklijke Philips Electronics N.V. | Device and method for holding a substrate |
FR2956521B1 (fr) * | 2010-02-16 | 2012-08-17 | Thales Sa | Dispositif comprenant des composants electriques, electroniques, electromecaniques ou electro-optiques, a sensibilite reduite a faible debit de dose |
ITMI20111987A1 (it) * | 2011-11-03 | 2013-05-04 | Getters Spa | Getters compositi perfezionati |
EP2736071B8 (en) | 2012-11-22 | 2017-04-19 | Tronic's Microsystems S.A. | Wafer level package with getter |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2686279A (en) * | 1949-09-28 | 1954-08-10 | Rca Corp | Semiconductor device |
JPS5258469A (en) * | 1975-11-10 | 1977-05-13 | Hitachi Ltd | Resin-molded type semiconductor device |
US4427992A (en) * | 1975-12-17 | 1984-01-24 | Motorola, Inc. | Method for incorporating a desiccant in a semiconductor package |
JPS55130149A (en) * | 1979-03-30 | 1980-10-08 | Hitachi Ltd | Semiconductor device |
-
1980
- 1980-03-31 JP JP4050580A patent/JPS56137658A/ja active Granted
-
1981
- 1981-03-30 DE DE19813112564 patent/DE3112564A1/de not_active Withdrawn
-
1984
- 1984-06-29 US US06/626,200 patent/US4630095A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4630095A (en) | 1986-12-16 |
DE3112564A1 (de) | 1982-06-03 |
JPS56137658A (en) | 1981-10-27 |
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