FR2956521B1 - Dispositif comprenant des composants electriques, electroniques, electromecaniques ou electro-optiques, a sensibilite reduite a faible debit de dose - Google Patents
Dispositif comprenant des composants electriques, electroniques, electromecaniques ou electro-optiques, a sensibilite reduite a faible debit de doseInfo
- Publication number
- FR2956521B1 FR2956521B1 FR1000647A FR1000647A FR2956521B1 FR 2956521 B1 FR2956521 B1 FR 2956521B1 FR 1000647 A FR1000647 A FR 1000647A FR 1000647 A FR1000647 A FR 1000647A FR 2956521 B1 FR2956521 B1 FR 2956521B1
- Authority
- FR
- France
- Prior art keywords
- electromechanical
- electro
- dose
- electronic
- electrical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
- B81B7/0038—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
- C01B3/0005—Reversible uptake of hydrogen by an appropriate medium, i.e. based on physical or chemical sorption phenomena or on reversible chemical reactions, e.g. for hydrogen storage purposes ; Reversible gettering of hydrogen; Reversible uptake of hydrogen by electrodes
- C01B3/001—Reversible uptake of hydrogen by an appropriate medium, i.e. based on physical or chemical sorption phenomena or on reversible chemical reactions, e.g. for hydrogen storage purposes ; Reversible gettering of hydrogen; Reversible uptake of hydrogen by electrodes characterised by the uptaking medium; Treatment thereof
- C01B3/0026—Reversible uptake of hydrogen by an appropriate medium, i.e. based on physical or chemical sorption phenomena or on reversible chemical reactions, e.g. for hydrogen storage purposes ; Reversible gettering of hydrogen; Reversible uptake of hydrogen by electrodes characterised by the uptaking medium; Treatment thereof of one single metal or a rare earth metal; Treatment thereof
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
- C01B3/0005—Reversible uptake of hydrogen by an appropriate medium, i.e. based on physical or chemical sorption phenomena or on reversible chemical reactions, e.g. for hydrogen storage purposes ; Reversible gettering of hydrogen; Reversible uptake of hydrogen by electrodes
- C01B3/001—Reversible uptake of hydrogen by an appropriate medium, i.e. based on physical or chemical sorption phenomena or on reversible chemical reactions, e.g. for hydrogen storage purposes ; Reversible gettering of hydrogen; Reversible uptake of hydrogen by electrodes characterised by the uptaking medium; Treatment thereof
- C01B3/0031—Intermetallic compounds; Metal alloys; Treatment thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
- C01B3/0005—Reversible uptake of hydrogen by an appropriate medium, i.e. based on physical or chemical sorption phenomena or on reversible chemical reactions, e.g. for hydrogen storage purposes ; Reversible gettering of hydrogen; Reversible uptake of hydrogen by electrodes
- C01B3/001—Reversible uptake of hydrogen by an appropriate medium, i.e. based on physical or chemical sorption phenomena or on reversible chemical reactions, e.g. for hydrogen storage purposes ; Reversible gettering of hydrogen; Reversible uptake of hydrogen by electrodes characterised by the uptaking medium; Treatment thereof
- C01B3/0084—Solid storage mediums characterised by their shape, e.g. pellets, sintered shaped bodies, sheets, porous compacts, spongy metals, hollow particles, solids with cavities, layered solids
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
- C01B3/50—Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification
- C01B3/508—Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification by selective and reversible uptake by an appropriate medium, i.e. the uptake being based on physical or chemical sorption phenomena or on reversible chemical reactions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B3/00—Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
- C01B3/50—Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification
- C01B3/52—Separation of hydrogen or hydrogen containing gases from gaseous mixtures, e.g. purification by contacting with liquids; Regeneration of used liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/564—Details not otherwise provided for, e.g. protection against moisture
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0118—Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/166—Material
- H01L2924/167—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/166—Material
- H01L2924/167—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/16738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/1676—Iron [Fe] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/166—Material
- H01L2924/16786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/16787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/32—Hydrogen storage
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Inorganic Chemistry (AREA)
- Combustion & Propulsion (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Micromachines (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Electroluminescent Light Sources (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1000647A FR2956521B1 (fr) | 2010-02-16 | 2010-02-16 | Dispositif comprenant des composants electriques, electroniques, electromecaniques ou electro-optiques, a sensibilite reduite a faible debit de dose |
PCT/EP2011/051774 WO2011101272A1 (fr) | 2010-02-16 | 2011-02-08 | Dispositif comprenant des composants electriques, electroniques, electromecaniques ou electro-optiques, a sensibilite reduite a faible debit de dose |
EP11703205A EP2537181A1 (fr) | 2010-02-16 | 2011-02-08 | Dispositif comprenant des composants electriques, electroniques, electromecaniques ou electro-optiques, a sensibilite reduite a faible debit de dose |
JP2012553259A JP2013520022A (ja) | 2010-02-16 | 2011-02-08 | 低線量率での感度を低下させた電気的、電子的、電気機械的または電気光学的構成要素を含むデバイス |
KR1020127024152A KR20130005275A (ko) | 2010-02-16 | 2011-02-08 | 낮은 도즈 레이트에서 감소된 민감도를 갖는 전기적, 전자적, 전기기계적, 또는 전자-광학적 컴포넌트들 |
US13/579,519 US20130207248A1 (en) | 2010-02-16 | 2011-02-08 | Device including electrical, electronic, electromechanical or electrooptical components having reduced sensitivity at a low dose rate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1000647A FR2956521B1 (fr) | 2010-02-16 | 2010-02-16 | Dispositif comprenant des composants electriques, electroniques, electromecaniques ou electro-optiques, a sensibilite reduite a faible debit de dose |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2956521A1 FR2956521A1 (fr) | 2011-08-19 |
FR2956521B1 true FR2956521B1 (fr) | 2012-08-17 |
Family
ID=42371396
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1000647A Expired - Fee Related FR2956521B1 (fr) | 2010-02-16 | 2010-02-16 | Dispositif comprenant des composants electriques, electroniques, electromecaniques ou electro-optiques, a sensibilite reduite a faible debit de dose |
Country Status (6)
Country | Link |
---|---|
US (1) | US20130207248A1 (fr) |
EP (1) | EP2537181A1 (fr) |
JP (1) | JP2013520022A (fr) |
KR (1) | KR20130005275A (fr) |
FR (1) | FR2956521B1 (fr) |
WO (1) | WO2011101272A1 (fr) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10109606B2 (en) | 2011-10-27 | 2018-10-23 | Global Circuit Innovations, Inc. | Remapped packaged extracted die |
US10128161B2 (en) | 2011-10-27 | 2018-11-13 | Global Circuit Innovations, Inc. | 3D printed hermetic package assembly and method |
US9870968B2 (en) | 2011-10-27 | 2018-01-16 | Global Circuit Innovations Incorporated | Repackaged integrated circuit and assembly method |
US10147660B2 (en) | 2011-10-27 | 2018-12-04 | Global Circuits Innovations, Inc. | Remapped packaged extracted die with 3D printed bond connections |
US9966319B1 (en) | 2011-10-27 | 2018-05-08 | Global Circuit Innovations Incorporated | Environmental hardening integrated circuit method and apparatus |
US10002846B2 (en) | 2011-10-27 | 2018-06-19 | Global Circuit Innovations Incorporated | Method for remapping a packaged extracted die with 3D printed bond connections |
US10177054B2 (en) | 2011-10-27 | 2019-01-08 | Global Circuit Innovations, Inc. | Method for remapping a packaged extracted die |
US9935028B2 (en) | 2013-03-05 | 2018-04-03 | Global Circuit Innovations Incorporated | Method and apparatus for printing integrated circuit bond connections |
CN103884945B (zh) * | 2014-04-04 | 2016-04-20 | 哈尔滨工业大学 | 基于改变温度及剂量率的低剂量率增强效应加速实验方法 |
FR3023974B1 (fr) * | 2014-07-18 | 2016-07-22 | Ulis | Procede de fabrication d'un dispositif comprenant un boitier hermetique sous vide et un getter |
US10115645B1 (en) | 2018-01-09 | 2018-10-30 | Global Circuit Innovations, Inc. | Repackaged reconditioned die method and assembly |
CN108362988B (zh) * | 2018-02-09 | 2020-12-29 | 哈尔滨工业大学 | 一种抑制双极晶体管低剂量率增强效应的方法 |
US11508680B2 (en) | 2020-11-13 | 2022-11-22 | Global Circuit Innovations Inc. | Solder ball application for singular die |
CN112928072B (zh) * | 2021-01-29 | 2023-09-19 | 重庆两江卫星移动通信有限公司 | 一种氮化镓场效应晶体管抗辐照加固的封装器件 |
EP4318927A1 (fr) * | 2021-05-31 | 2024-02-07 | Saginomiya Seisakusho, Inc. | Dispositif à électret |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56137658A (en) * | 1980-03-31 | 1981-10-27 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor device |
US6261508B1 (en) * | 1994-04-01 | 2001-07-17 | Maxwell Electronic Components Group, Inc. | Method for making a shielding composition |
US5861665A (en) * | 1997-05-13 | 1999-01-19 | Lucent Technologies Inc. | Structure for absorption of hydrogen in a package |
US6110808A (en) * | 1998-12-04 | 2000-08-29 | Trw Inc. | Hydrogen getter for integrated microelectronic assembly |
JP2001168240A (ja) * | 1999-10-08 | 2001-06-22 | Trw Inc | 集積型マイクロエレクトロニクスモジュール |
US6423575B1 (en) * | 2001-07-27 | 2002-07-23 | Dean Tran | Hydrogen gettering structure including silver-doped palladium layer to increase hydrogen gettering of module component and semiconductor device module having such structure, and methods of fabrication |
US20030062610A1 (en) * | 2001-09-28 | 2003-04-03 | Kovacs Alan L. | Multilayer thin film hydrogen getter |
US6923625B2 (en) * | 2002-01-07 | 2005-08-02 | Integrated Sensing Systems, Inc. | Method of forming a reactive material and article formed thereby |
US7160368B1 (en) * | 2002-07-12 | 2007-01-09 | Em4, Inc. | System and method for gettering gas-phase contaminants within a sealed enclosure |
US6929974B2 (en) * | 2002-10-18 | 2005-08-16 | Motorola, Inc. | Feedthrough design and method for a hermetically sealed microdevice |
ITMI20030069A1 (it) * | 2003-01-17 | 2004-07-18 | Getters Spa | Dispositivi micromeccanici o microoptoelettronici con deposito di materiale getter e riscaldatore integrato. |
US6867543B2 (en) * | 2003-03-31 | 2005-03-15 | Motorola, Inc. | Microdevice assembly having a fine grain getter layer for maintaining vacuum |
US6919623B2 (en) * | 2003-12-12 | 2005-07-19 | The Boeing Company | Hydrogen diffusion hybrid port and method of forming |
US20090001537A1 (en) * | 2007-06-27 | 2009-01-01 | Innovative Micro Technology | Gettering material for encapsulated microdevices and method of manufacture |
JP5123079B2 (ja) * | 2008-06-30 | 2013-01-16 | 京セラクリスタルデバイス株式会社 | 電子部品用の蓋体 |
-
2010
- 2010-02-16 FR FR1000647A patent/FR2956521B1/fr not_active Expired - Fee Related
-
2011
- 2011-02-08 US US13/579,519 patent/US20130207248A1/en not_active Abandoned
- 2011-02-08 JP JP2012553259A patent/JP2013520022A/ja active Pending
- 2011-02-08 EP EP11703205A patent/EP2537181A1/fr not_active Withdrawn
- 2011-02-08 WO PCT/EP2011/051774 patent/WO2011101272A1/fr active Application Filing
- 2011-02-08 KR KR1020127024152A patent/KR20130005275A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
FR2956521A1 (fr) | 2011-08-19 |
EP2537181A1 (fr) | 2012-12-26 |
KR20130005275A (ko) | 2013-01-15 |
WO2011101272A1 (fr) | 2011-08-25 |
US20130207248A1 (en) | 2013-08-15 |
JP2013520022A (ja) | 2013-05-30 |
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