JPS6248379B2 - - Google Patents
Info
- Publication number
- JPS6248379B2 JPS6248379B2 JP56202892A JP20289281A JPS6248379B2 JP S6248379 B2 JPS6248379 B2 JP S6248379B2 JP 56202892 A JP56202892 A JP 56202892A JP 20289281 A JP20289281 A JP 20289281A JP S6248379 B2 JPS6248379 B2 JP S6248379B2
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- silicon layer
- insulating film
- thickness
- interlayer insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10D64/011—
Landscapes
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56202892A JPS58103154A (ja) | 1981-12-15 | 1981-12-15 | 多結晶シリコン層間絶縁膜形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56202892A JPS58103154A (ja) | 1981-12-15 | 1981-12-15 | 多結晶シリコン層間絶縁膜形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58103154A JPS58103154A (ja) | 1983-06-20 |
| JPS6248379B2 true JPS6248379B2 (OSRAM) | 1987-10-13 |
Family
ID=16464923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56202892A Granted JPS58103154A (ja) | 1981-12-15 | 1981-12-15 | 多結晶シリコン層間絶縁膜形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58103154A (OSRAM) |
-
1981
- 1981-12-15 JP JP56202892A patent/JPS58103154A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58103154A (ja) | 1983-06-20 |
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