JPS58103154A - 多結晶シリコン層間絶縁膜形成方法 - Google Patents

多結晶シリコン層間絶縁膜形成方法

Info

Publication number
JPS58103154A
JPS58103154A JP56202892A JP20289281A JPS58103154A JP S58103154 A JPS58103154 A JP S58103154A JP 56202892 A JP56202892 A JP 56202892A JP 20289281 A JP20289281 A JP 20289281A JP S58103154 A JPS58103154 A JP S58103154A
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
silicon layer
insulating film
interlayer insulating
gate oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56202892A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6248379B2 (OSRAM
Inventor
Shuichi Mayumi
周一 真弓
Toshiya Yamato
大和　俊哉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP56202892A priority Critical patent/JPS58103154A/ja
Publication of JPS58103154A publication Critical patent/JPS58103154A/ja
Publication of JPS6248379B2 publication Critical patent/JPS6248379B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10D64/011—

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP56202892A 1981-12-15 1981-12-15 多結晶シリコン層間絶縁膜形成方法 Granted JPS58103154A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56202892A JPS58103154A (ja) 1981-12-15 1981-12-15 多結晶シリコン層間絶縁膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56202892A JPS58103154A (ja) 1981-12-15 1981-12-15 多結晶シリコン層間絶縁膜形成方法

Publications (2)

Publication Number Publication Date
JPS58103154A true JPS58103154A (ja) 1983-06-20
JPS6248379B2 JPS6248379B2 (OSRAM) 1987-10-13

Family

ID=16464923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56202892A Granted JPS58103154A (ja) 1981-12-15 1981-12-15 多結晶シリコン層間絶縁膜形成方法

Country Status (1)

Country Link
JP (1) JPS58103154A (OSRAM)

Also Published As

Publication number Publication date
JPS6248379B2 (OSRAM) 1987-10-13

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