JPS6246073B2 - - Google Patents
Info
- Publication number
- JPS6246073B2 JPS6246073B2 JP20903182A JP20903182A JPS6246073B2 JP S6246073 B2 JPS6246073 B2 JP S6246073B2 JP 20903182 A JP20903182 A JP 20903182A JP 20903182 A JP20903182 A JP 20903182A JP S6246073 B2 JPS6246073 B2 JP S6246073B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- film
- gate
- dry etching
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 238000001312 dry etching Methods 0.000 claims description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 238000001020 plasma etching Methods 0.000 claims description 11
- 238000005468 ion implantation Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000005669 field effect Effects 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000010931 gold Substances 0.000 description 13
- 239000007789 gas Substances 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20903182A JPS5999776A (ja) | 1982-11-29 | 1982-11-29 | シヨツトキ−ゲ−ト型電界効果トランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20903182A JPS5999776A (ja) | 1982-11-29 | 1982-11-29 | シヨツトキ−ゲ−ト型電界効果トランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5999776A JPS5999776A (ja) | 1984-06-08 |
| JPS6246073B2 true JPS6246073B2 (US20090163788A1-20090625-C00002.png) | 1987-09-30 |
Family
ID=16566107
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20903182A Granted JPS5999776A (ja) | 1982-11-29 | 1982-11-29 | シヨツトキ−ゲ−ト型電界効果トランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5999776A (US20090163788A1-20090625-C00002.png) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH022071U (US20090163788A1-20090625-C00002.png) * | 1988-06-17 | 1990-01-09 | ||
| JPH0415108Y2 (US20090163788A1-20090625-C00002.png) * | 1987-01-12 | 1992-04-06 |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6081872A (ja) * | 1983-10-11 | 1985-05-09 | Oki Electric Ind Co Ltd | 半導体素子の製造方法 |
| JPS6143481A (ja) * | 1984-08-08 | 1986-03-03 | Oki Electric Ind Co Ltd | シヨツトキゲ−ト電界効果トランジスタの製造方法 |
| JPH0812868B2 (ja) * | 1984-08-27 | 1996-02-07 | 沖電気工業株式会社 | 化合物半導体素子の製造方法 |
| JPS6181672A (ja) * | 1984-09-28 | 1986-04-25 | Nec Corp | 半導体装置の製造方法 |
| JPS6196735A (ja) * | 1984-10-17 | 1986-05-15 | Toshiba Corp | 導体パタ−ン形成方法 |
| JPS61108175A (ja) * | 1984-11-01 | 1986-05-26 | Toshiba Corp | 半導体装置及び製造方法 |
| EP0208795A1 (en) * | 1985-07-12 | 1987-01-21 | International Business Machines Corporation | Method of fabricating a self-aligned metal-semiconductor FET |
| JPS62156878A (ja) * | 1985-12-28 | 1987-07-11 | Nec Corp | 半導体装置 |
| US4689869A (en) * | 1986-04-07 | 1987-09-01 | International Business Machines Corporation | Fabrication of insulated gate gallium arsenide FET with self-aligned source/drain and submicron channel length |
| JPS62243359A (ja) * | 1986-04-15 | 1987-10-23 | Matsushita Electric Ind Co Ltd | 化合物半導体装置 |
| JP2557432B2 (ja) * | 1987-12-25 | 1996-11-27 | 富士通株式会社 | 電界効果トランジスタ |
| JP5098166B2 (ja) * | 2005-12-12 | 2012-12-12 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子及びその製造方法 |
-
1982
- 1982-11-29 JP JP20903182A patent/JPS5999776A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0415108Y2 (US20090163788A1-20090625-C00002.png) * | 1987-01-12 | 1992-04-06 | ||
| JPH022071U (US20090163788A1-20090625-C00002.png) * | 1988-06-17 | 1990-01-09 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5999776A (ja) | 1984-06-08 |
