JPS6244712B2 - - Google Patents

Info

Publication number
JPS6244712B2
JPS6244712B2 JP55111339A JP11133980A JPS6244712B2 JP S6244712 B2 JPS6244712 B2 JP S6244712B2 JP 55111339 A JP55111339 A JP 55111339A JP 11133980 A JP11133980 A JP 11133980A JP S6244712 B2 JPS6244712 B2 JP S6244712B2
Authority
JP
Japan
Prior art keywords
semiconductor
photoelectric conversion
conversion device
conductivity type
semiconductor region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55111339A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5736875A (en
Inventor
Eiichi Yamaguchi
Takeshi Kobayashi
Yoshitaka Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP11133980A priority Critical patent/JPS5736875A/ja
Publication of JPS5736875A publication Critical patent/JPS5736875A/ja
Publication of JPS6244712B2 publication Critical patent/JPS6244712B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
JP11133980A 1980-08-13 1980-08-13 Semiconductor photoelectric converter Granted JPS5736875A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11133980A JPS5736875A (en) 1980-08-13 1980-08-13 Semiconductor photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11133980A JPS5736875A (en) 1980-08-13 1980-08-13 Semiconductor photoelectric converter

Publications (2)

Publication Number Publication Date
JPS5736875A JPS5736875A (en) 1982-02-27
JPS6244712B2 true JPS6244712B2 (sv) 1987-09-22

Family

ID=14558682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11133980A Granted JPS5736875A (en) 1980-08-13 1980-08-13 Semiconductor photoelectric converter

Country Status (1)

Country Link
JP (1) JPS5736875A (sv)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3413222C2 (de) * 1984-04-07 1995-02-09 Kolbus Gmbh & Co Kg Verfahren zum Überführen von Buchblocks in das Transportmittel einer Buchbindemaschine und Vorrichtung zur Durchführung des Verfahrens
JP2009065858A (ja) * 2007-09-11 2009-04-02 Daiwa Seiko Inc 魚釣用リール

Also Published As

Publication number Publication date
JPS5736875A (en) 1982-02-27

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