JPS6241433B2 - - Google Patents

Info

Publication number
JPS6241433B2
JPS6241433B2 JP10868380A JP10868380A JPS6241433B2 JP S6241433 B2 JPS6241433 B2 JP S6241433B2 JP 10868380 A JP10868380 A JP 10868380A JP 10868380 A JP10868380 A JP 10868380A JP S6241433 B2 JPS6241433 B2 JP S6241433B2
Authority
JP
Japan
Prior art keywords
electrode
dielectric
gate electrode
chip
drain electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10868380A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5732676A (en
Inventor
Masaaki Nakatani
Mutsuyuki Ootsubo
Yasuro Mitsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10868380A priority Critical patent/JPS5732676A/ja
Publication of JPS5732676A publication Critical patent/JPS5732676A/ja
Publication of JPS6241433B2 publication Critical patent/JPS6241433B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W44/20—
    • H10W70/681—
    • H10W72/07251—
    • H10W72/20—
    • H10W90/737—

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP10868380A 1980-08-06 1980-08-06 High power gaas field effect transistor Granted JPS5732676A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10868380A JPS5732676A (en) 1980-08-06 1980-08-06 High power gaas field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10868380A JPS5732676A (en) 1980-08-06 1980-08-06 High power gaas field effect transistor

Publications (2)

Publication Number Publication Date
JPS5732676A JPS5732676A (en) 1982-02-22
JPS6241433B2 true JPS6241433B2 (cg-RX-API-DMAC10.html) 1987-09-02

Family

ID=14491013

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10868380A Granted JPS5732676A (en) 1980-08-06 1980-08-06 High power gaas field effect transistor

Country Status (1)

Country Link
JP (1) JPS5732676A (cg-RX-API-DMAC10.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5623231A (en) * 1994-09-26 1997-04-22 Endgate Corporation Push-pull power amplifier
DE10220396B4 (de) * 2002-05-07 2007-08-23 Infineon Technologies Ag Leistungshalbleiterbauelementanordnung
TWI236117B (en) * 2003-02-26 2005-07-11 Advanced Semiconductor Eng Semiconductor package with a heat sink
CN102201449B (zh) * 2011-05-27 2013-01-09 电子科技大学 一种功率mos器件低热阻封装结构
US9196577B2 (en) * 2014-01-09 2015-11-24 Infineon Technologies Ag Semiconductor packaging arrangement

Also Published As

Publication number Publication date
JPS5732676A (en) 1982-02-22

Similar Documents

Publication Publication Date Title
US4250520A (en) Flip chip mounted diode
US3986196A (en) Through-substrate source contact for microwave FET
JP7380310B2 (ja) 電界効果トランジスタ及び半導体装置
JPH065881A (ja) 半導体装置およびその製造方法
US6166436A (en) High frequency semiconductor device
JP3674780B2 (ja) 高周波半導体装置
JPS6241433B2 (cg-RX-API-DMAC10.html)
US9000496B1 (en) Source bridge for cooling and/or external connection
JP7332130B2 (ja) 半導体デバイスの製造方法、半導体装置の製造方法、半導体デバイス、及び半導体装置
JP2574510B2 (ja) 高周波半導体装置
JPH05335487A (ja) 伝送回路素子
JP4718751B2 (ja) 半導体装置
JPS5914906B2 (ja) 電界効果トランジスタの製造方法
JPS5892277A (ja) 電界効果トランジスタの製造方法
JPS6255721B2 (cg-RX-API-DMAC10.html)
JPH10321762A (ja) 半導体装置
JPS6266650A (ja) 半導体装置用パツケ−ジ
JPS5917979B2 (ja) 半導体装置
JPH0513539B2 (cg-RX-API-DMAC10.html)
JP2758888B2 (ja) 半導体装置
JPS5832270Y2 (ja) 電界効果型トランジスタ
JP2549795B2 (ja) 化合物半導体集積回路及びその製造方法
JPH0436112Y2 (cg-RX-API-DMAC10.html)
JPH02276269A (ja) 半導体装置
JPS586152A (ja) トランジスタパツケ−ジの製造方法