JPS6240864B2 - - Google Patents

Info

Publication number
JPS6240864B2
JPS6240864B2 JP57097311A JP9731182A JPS6240864B2 JP S6240864 B2 JPS6240864 B2 JP S6240864B2 JP 57097311 A JP57097311 A JP 57097311A JP 9731182 A JP9731182 A JP 9731182A JP S6240864 B2 JPS6240864 B2 JP S6240864B2
Authority
JP
Japan
Prior art keywords
film
gate electrode
polycrystalline silicon
semiconductor
type polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57097311A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58215063A (ja
Inventor
Yoshihisa Mizutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57097311A priority Critical patent/JPS58215063A/ja
Publication of JPS58215063A publication Critical patent/JPS58215063A/ja
Publication of JPS6240864B2 publication Critical patent/JPS6240864B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP57097311A 1982-06-07 1982-06-07 半導体装置 Granted JPS58215063A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57097311A JPS58215063A (ja) 1982-06-07 1982-06-07 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57097311A JPS58215063A (ja) 1982-06-07 1982-06-07 半導体装置

Publications (2)

Publication Number Publication Date
JPS58215063A JPS58215063A (ja) 1983-12-14
JPS6240864B2 true JPS6240864B2 (enrdf_load_stackoverflow) 1987-08-31

Family

ID=14188939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57097311A Granted JPS58215063A (ja) 1982-06-07 1982-06-07 半導体装置

Country Status (1)

Country Link
JP (1) JPS58215063A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0691221B2 (ja) * 1984-07-03 1994-11-14 株式会社東芝 半導体記憶装置
JPH0671050B2 (ja) * 1986-11-14 1994-09-07 日本電気株式会社 半導体集積回路装置
EP0272433B1 (de) * 1986-11-18 1993-03-31 Siemens Aktiengesellschaft Integrierte Halbleiterschaltung mit als Dünnschichtstege auf den die aktiven Transistorbereiche trennenden Feldoxidbereichen angeordneten Lastwiderstände und Verfahren zu ihrer Herstellung

Also Published As

Publication number Publication date
JPS58215063A (ja) 1983-12-14

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