JPS6229399B2 - - Google Patents

Info

Publication number
JPS6229399B2
JPS6229399B2 JP56194287A JP19428781A JPS6229399B2 JP S6229399 B2 JPS6229399 B2 JP S6229399B2 JP 56194287 A JP56194287 A JP 56194287A JP 19428781 A JP19428781 A JP 19428781A JP S6229399 B2 JPS6229399 B2 JP S6229399B2
Authority
JP
Japan
Prior art keywords
growth
compound semiconductor
pressure
vapor pressure
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56194287A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5895696A (ja
Inventor
Junichi Nishizawa
Masakazu Morishita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP56194287A priority Critical patent/JPS5895696A/ja
Publication of JPS5895696A publication Critical patent/JPS5895696A/ja
Publication of JPS6229399B2 publication Critical patent/JPS6229399B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP56194287A 1981-12-01 1981-12-01 気相成長方法 Granted JPS5895696A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56194287A JPS5895696A (ja) 1981-12-01 1981-12-01 気相成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56194287A JPS5895696A (ja) 1981-12-01 1981-12-01 気相成長方法

Publications (2)

Publication Number Publication Date
JPS5895696A JPS5895696A (ja) 1983-06-07
JPS6229399B2 true JPS6229399B2 (enExample) 1987-06-25

Family

ID=16322086

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56194287A Granted JPS5895696A (ja) 1981-12-01 1981-12-01 気相成長方法

Country Status (1)

Country Link
JP (1) JPS5895696A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02103090U (enExample) * 1989-01-31 1990-08-16

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6291494A (ja) * 1985-10-16 1987-04-25 Res Dev Corp Of Japan 化合物半導体単結晶成長方法及び装置
JPH05291140A (ja) * 1992-04-09 1993-11-05 Fujitsu Ltd 化合物半導体薄膜の成長方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02103090U (enExample) * 1989-01-31 1990-08-16

Also Published As

Publication number Publication date
JPS5895696A (ja) 1983-06-07

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