JPS6227727B2 - - Google Patents

Info

Publication number
JPS6227727B2
JPS6227727B2 JP55171304A JP17130480A JPS6227727B2 JP S6227727 B2 JPS6227727 B2 JP S6227727B2 JP 55171304 A JP55171304 A JP 55171304A JP 17130480 A JP17130480 A JP 17130480A JP S6227727 B2 JPS6227727 B2 JP S6227727B2
Authority
JP
Japan
Prior art keywords
thin film
impurity
film
impurity region
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55171304A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5795625A (en
Inventor
Jiro Ooshima
Yutaka Etsuno
Takashi Yasujima
Toshio Yonezawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP55171304A priority Critical patent/JPS5795625A/ja
Priority to DE19813147535 priority patent/DE3147535A1/de
Priority to US06/327,190 priority patent/US4426234A/en
Publication of JPS5795625A publication Critical patent/JPS5795625A/ja
Publication of JPS6227727B2 publication Critical patent/JPS6227727B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P30/40—
    • H10P30/20—
    • H10P32/141—
    • H10P32/171—
JP55171304A 1980-12-04 1980-12-04 Manufacture of semiconductor device Granted JPS5795625A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP55171304A JPS5795625A (en) 1980-12-04 1980-12-04 Manufacture of semiconductor device
DE19813147535 DE3147535A1 (de) 1980-12-04 1981-12-01 Verfahren zum herstellen einer halbleitervorrichtung
US06/327,190 US4426234A (en) 1980-12-04 1981-12-03 Method of forming reproducible impurity zone of gallium or aluminum in a wafer by implanting through composite layers and diffusion annealing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55171304A JPS5795625A (en) 1980-12-04 1980-12-04 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5795625A JPS5795625A (en) 1982-06-14
JPS6227727B2 true JPS6227727B2 (enExample) 1987-06-16

Family

ID=15920793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55171304A Granted JPS5795625A (en) 1980-12-04 1980-12-04 Manufacture of semiconductor device

Country Status (3)

Country Link
US (1) US4426234A (enExample)
JP (1) JPS5795625A (enExample)
DE (1) DE3147535A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6427458A (en) * 1987-07-22 1989-01-30 Cubic Eng Kk Healthy drink

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4804634A (en) * 1981-04-24 1989-02-14 National Semiconductor Corporation Integrated circuit lateral transistor structure
JPS58125823A (ja) * 1982-01-22 1983-07-27 Hitachi Ltd 半導体装置の製造方法
JPS5935425A (ja) * 1982-08-23 1984-02-27 Toshiba Corp 半導体装置の製造方法
JPS6215864A (ja) * 1985-07-15 1987-01-24 Hitachi Ltd 太陽電池の製造方法
JPS6393153A (ja) * 1986-10-07 1988-04-23 Toshiba Corp 半導体装置の製造方法
JPS63144517A (ja) * 1986-12-09 1988-06-16 Nec Corp 半導体装置の製造方法
US6352940B1 (en) * 1998-06-26 2002-03-05 Intel Corporation Semiconductor passivation deposition process for interfacial adhesion

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2427103A1 (de) * 1974-06-05 1975-12-18 Idn Invention Dev Novelties Behaelter zur aufbewahrung von magnetbandkassetten
DE2449688C3 (de) 1974-10-18 1980-07-10 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung einer dotierten Zone eines Leitfähigkeitstyps in einem Halbleiterkörper
JPS5950113B2 (ja) 1975-11-05 1984-12-06 株式会社東芝 半導体装置
US4063973A (en) 1975-11-10 1977-12-20 Tokyo Shibaura Electric Co., Ltd. Method of making a semiconductor device
JPS5272162A (en) * 1975-12-12 1977-06-16 Toshiba Corp Production of semiconductor device
US4102715A (en) 1975-12-19 1978-07-25 Matsushita Electric Industrial Co., Ltd. Method for diffusing an impurity into a semiconductor body
FR2417853A1 (fr) 1978-02-17 1979-09-14 Thomson Csf Procede de realisation d'un transistor de type mos et transistor realise selon ce procede
JPS5586151A (en) 1978-12-23 1980-06-28 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor integrated circuit
JPS55128828A (en) * 1979-03-28 1980-10-06 Matsushita Electronics Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6427458A (en) * 1987-07-22 1989-01-30 Cubic Eng Kk Healthy drink

Also Published As

Publication number Publication date
DE3147535A1 (de) 1982-08-05
JPS5795625A (en) 1982-06-14
DE3147535C2 (enExample) 1988-07-28
US4426234A (en) 1984-01-17

Similar Documents

Publication Publication Date Title
US4431460A (en) Method of producing shallow, narrow base bipolar transistor structures via dual implantations of selected polycrystalline layer
Crowder The influence of the amorphous phase on ion distributions and annealing behavior of group III and group V ions implanted into silicon
US4332627A (en) Method of eliminating lattice defects in a semiconductor device
US3945856A (en) Method of ion implantation through an electrically insulative material
JPS63166220A (ja) 半導体装置の製造方法
JPS6227727B2 (enExample)
JPH0126171B2 (enExample)
JP3249753B2 (ja) 半導体素子の製造方法
EP0219243A2 (en) Process of manufacturing a bipolar transistor
JPH039612B2 (enExample)
JPS6392030A (ja) 半導体装置の製造方法
US4210473A (en) Process for producing a semiconductor device
JPS6125209B2 (enExample)
JPS6142854B2 (enExample)
JPH01151232A (ja) 半導体装置の製造方法
JP3223748B2 (ja) 多結晶シリコン薄膜のアモルファス化方法及びこのアモルファス化方法を用いた多結晶シリコン薄膜抵抗の製造方法
JPS5954222A (ja) 半導体装置の製造方法
Benyaich et al. Realignment of As doped polycrystalline Si films by double step annealing
JPH02301132A (ja) 半導体基板にアルミニウム拡散層を形成する方法
JPS6255689B2 (enExample)
JPS60149125A (ja) 半導体基板への不純物添加方法
JPS6129537B2 (enExample)
JPS58207641A (ja) 半導体装置用基板
JPS60175416A (ja) 半導体装置の製造方法
JPS6211504B2 (enExample)