JPH0126171B2 - - Google Patents

Info

Publication number
JPH0126171B2
JPH0126171B2 JP56129029A JP12902981A JPH0126171B2 JP H0126171 B2 JPH0126171 B2 JP H0126171B2 JP 56129029 A JP56129029 A JP 56129029A JP 12902981 A JP12902981 A JP 12902981A JP H0126171 B2 JPH0126171 B2 JP H0126171B2
Authority
JP
Japan
Prior art keywords
thin film
film
impurity
manufacturing
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56129029A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5831519A (ja
Inventor
Jiro Ooshima
Yutaka Etsuno
Takashi Yasujima
Toshio Yonezawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56129029A priority Critical patent/JPS5831519A/ja
Publication of JPS5831519A publication Critical patent/JPS5831519A/ja
Publication of JPH0126171B2 publication Critical patent/JPH0126171B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P32/141—
    • H10P32/171—

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
JP56129029A 1981-08-18 1981-08-18 半導体装置の製造方法 Granted JPS5831519A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56129029A JPS5831519A (ja) 1981-08-18 1981-08-18 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56129029A JPS5831519A (ja) 1981-08-18 1981-08-18 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5831519A JPS5831519A (ja) 1983-02-24
JPH0126171B2 true JPH0126171B2 (enExample) 1989-05-22

Family

ID=14999362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56129029A Granted JPS5831519A (ja) 1981-08-18 1981-08-18 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5831519A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6393153A (ja) * 1986-10-07 1988-04-23 Toshiba Corp 半導体装置の製造方法
JP3015717B2 (ja) * 1994-09-14 2000-03-06 三洋電機株式会社 半導体装置の製造方法および半導体装置
US6268657B1 (en) 1995-09-14 2001-07-31 Sanyo Electric Co., Ltd. Semiconductor devices and an insulating layer with an impurity
US6288438B1 (en) 1996-09-06 2001-09-11 Sanyo Electric Co., Ltd. Semiconductor device including insulation film and fabrication method thereof
JP3015767B2 (ja) * 1996-12-25 2000-03-06 三洋電機株式会社 半導体装置の製造方法及び半導体装置
US6690084B1 (en) 1997-09-26 2004-02-10 Sanyo Electric Co., Ltd. Semiconductor device including insulation film and fabrication method thereof
JP2975934B2 (ja) 1997-09-26 1999-11-10 三洋電機株式会社 半導体装置の製造方法及び半導体装置
US6794283B2 (en) 1998-05-29 2004-09-21 Sanyo Electric Co., Ltd. Semiconductor device and fabrication method thereof
FR2823596B1 (fr) 2001-04-13 2004-08-20 Commissariat Energie Atomique Substrat ou structure demontable et procede de realisation
US6917110B2 (en) 2001-12-07 2005-07-12 Sanyo Electric Co., Ltd. Semiconductor device comprising an interconnect structure with a modified low dielectric insulation layer
FR2899378B1 (fr) * 2006-03-29 2008-06-27 Commissariat Energie Atomique Procede de detachement d'un film mince par fusion de precipites

Also Published As

Publication number Publication date
JPS5831519A (ja) 1983-02-24

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