JPS62265729A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS62265729A
JPS62265729A JP61108594A JP10859486A JPS62265729A JP S62265729 A JPS62265729 A JP S62265729A JP 61108594 A JP61108594 A JP 61108594A JP 10859486 A JP10859486 A JP 10859486A JP S62265729 A JPS62265729 A JP S62265729A
Authority
JP
Japan
Prior art keywords
copper
semiconductor device
electrode
wirings
ball
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61108594A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0450741B2 (enExample
Inventor
Masahiro Koizumi
小泉　正博
Hitoshi Onuki
仁 大貫
Yasushi Kawabuchi
靖 河渕
Mitsuo Chikazaki
充夫 近崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP61108594A priority Critical patent/JPS62265729A/ja
Publication of JPS62265729A publication Critical patent/JPS62265729A/ja
Publication of JPH0450741B2 publication Critical patent/JPH0450741B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W72/50—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H10W72/01551—
    • H10W72/075—
    • H10W72/07551—
    • H10W72/07553—
    • H10W72/07555—
    • H10W72/531—
    • H10W72/536—
    • H10W72/5363—
    • H10W72/5525—
    • H10W72/5528—
    • H10W72/59—
    • H10W72/923—
    • H10W72/952—
    • H10W74/00—
    • H10W90/756—

Landscapes

  • Wire Bonding (AREA)
JP61108594A 1986-05-14 1986-05-14 半導体装置 Granted JPS62265729A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61108594A JPS62265729A (ja) 1986-05-14 1986-05-14 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61108594A JPS62265729A (ja) 1986-05-14 1986-05-14 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP52A Division JPH06168990A (ja) 1993-08-09 1993-08-09 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS62265729A true JPS62265729A (ja) 1987-11-18
JPH0450741B2 JPH0450741B2 (enExample) 1992-08-17

Family

ID=14488762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61108594A Granted JPS62265729A (ja) 1986-05-14 1986-05-14 半導体装置

Country Status (1)

Country Link
JP (1) JPS62265729A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5116783A (en) * 1989-01-13 1992-05-26 Mitsubishi Denki Kabushiki Kaisha Method of producing semiconductor device
US5229646A (en) * 1989-01-13 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with a copper wires ball bonded to aluminum electrodes
JPH06168990A (ja) * 1993-08-09 1994-06-14 Hitachi Ltd 半導体装置の製造方法
CN103426918A (zh) * 2012-05-17 2013-12-04 新日本无线株式会社 半导体器件及其制造方法
KR20140138968A (ko) 2012-03-22 2014-12-04 스미또모 베이크라이트 가부시키가이샤 반도체 장치 및 그 제조 방법
US9147645B2 (en) 2012-03-23 2015-09-29 Sumitomo Bakelite Co., Ltd. Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5730206A (en) * 1980-06-24 1982-02-18 Heraeus Gmbh W C Contact extra fine conductor for semiconductor constituent element
JPS60240137A (ja) * 1984-05-15 1985-11-29 Mitsubishi Electric Corp ワイヤボンデイング用キヤピラリチツプ
JPS6188537A (ja) * 1984-10-05 1986-05-06 Mitsubishi Electric Corp 半導体装置のリ−ド

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5730206A (en) * 1980-06-24 1982-02-18 Heraeus Gmbh W C Contact extra fine conductor for semiconductor constituent element
JPS60240137A (ja) * 1984-05-15 1985-11-29 Mitsubishi Electric Corp ワイヤボンデイング用キヤピラリチツプ
JPS6188537A (ja) * 1984-10-05 1986-05-06 Mitsubishi Electric Corp 半導体装置のリ−ド

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5116783A (en) * 1989-01-13 1992-05-26 Mitsubishi Denki Kabushiki Kaisha Method of producing semiconductor device
US5229646A (en) * 1989-01-13 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with a copper wires ball bonded to aluminum electrodes
JPH06168990A (ja) * 1993-08-09 1994-06-14 Hitachi Ltd 半導体装置の製造方法
KR20140138968A (ko) 2012-03-22 2014-12-04 스미또모 베이크라이트 가부시키가이샤 반도체 장치 및 그 제조 방법
US9230892B2 (en) 2012-03-22 2016-01-05 Sumitomo Bakelite Co., Ltd. Semiconductor device and method of manufacturing the same
US9147645B2 (en) 2012-03-23 2015-09-29 Sumitomo Bakelite Co., Ltd. Semiconductor device
CN103426918A (zh) * 2012-05-17 2013-12-04 新日本无线株式会社 半导体器件及其制造方法
JP2013243166A (ja) * 2012-05-17 2013-12-05 New Japan Radio Co Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPH0450741B2 (enExample) 1992-08-17

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