JPS61285743A - 電気的装置 - Google Patents

電気的装置

Info

Publication number
JPS61285743A
JPS61285743A JP60126122A JP12612285A JPS61285743A JP S61285743 A JPS61285743 A JP S61285743A JP 60126122 A JP60126122 A JP 60126122A JP 12612285 A JP12612285 A JP 12612285A JP S61285743 A JPS61285743 A JP S61285743A
Authority
JP
Japan
Prior art keywords
wire
plated
lead frame
wires
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60126122A
Other languages
English (en)
Inventor
Masahiro Koizumi
小泉　正博
Hitoshi Onuki
仁 大貫
Yasushi Kawabuchi
靖 河渕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60126122A priority Critical patent/JPS61285743A/ja
Publication of JPS61285743A publication Critical patent/JPS61285743A/ja
Pending legal-status Critical Current

Links

Classifications

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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01—ELECTRIC ELEMENTS
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
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    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85439—Silver (Ag) as principal constituent
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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  • Engineering & Computer Science (AREA)
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  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は新規な電気的装置に係り、特に半導体素子と外
部端子とを細径ワイヤで接続されている半導体装置に関
する。
〔発明の背景〕
現在、トランジスタ、ＩＣ，ＬＳＩなどの半導体装置の
半導体素子と外部端子との接続には直径２０〜５０μｍ
のＡｕワイヤが多く用いられている（例えば特開昭５９
−２８５５３号公報）。半導体素子へのワイヤの接続は
、ワイヤの先端に水素炎や放電によってボールを形成し
、そのボールを半導体素子に熱圧着（ボールボンディン
グ）によって行われている。一方、リードフレームには
ウェッジボンディングによって接続される。Ａｕワイヤ
による接続はワイヤと半導体素子及びリードフレーム（
Ａｇめつきが施されている）との接合強度が高く、接合
不良の発生率もきわめて小さい。しかも、Ａｕは耐食性
に優れていることから、プラスチック封止の製品に適用
されている。
しかし、Ａｕワイヤは高価なことから、その替りに安価
なＡＱやＣｕワイヤを使用することが検討されている。
ＡＱやＣｕワイヤにおいてもＡｕと同様にポールボンデ
ィングで行われている。しかし、いずれのワイヤも耐食
性が低いという欠点がある。したがって、上記ワイヤを
プラスチック封止の製品に適用した場合はプラスチック
を通して浸入する水分によって容易にワイヤが腐食され
る。ワイヤの腐食によって抵抗が増大し、やがては断線
に至る。さらにワイヤとリードフレームとの接合部の信
頼性にも問題がある。すなわち。
Ａｕワイヤの場合は、ワイヤとリードフレームとの接合
部が水分によって腐食する。一方、Ｃｕワイヤの場合は
ワイヤとリードフレームとの接合強度が低いことと、着
きにくいという問題がある。
接合強度が低いと接合した後、プラスチックをモールド
する時に容易に接合部が剥離してしまう。
また、Ｃｕワイヤは熱によって容易に酸化し易い。
すなわち、ワイヤを半導体素子及びリードフレームに接
続する時には、素子及びリードフレームを２００〜３０
０℃に加熱する。Ｃｕワイヤの場合には、この温度で酸
化してしまう、この酸化によってワイヤの抵抗が増大し
、不良の原因となる。
以上、ＡＱ及びＣｕワイヤをＡｕの替りにプラスチック
封止品に適用するためには、ワイヤの高耐食化、耐酸化
、リードフレームとの接合部の高信頼化が必要である。
〔発明の目的〕
本発明の目的は、Ａｕ及びＡｇ等の貴金属をＡΩやＣｕ
ワイヤにめっきしたボンディングワイヤによって電気的
に接続された電気的装置を提供するにある。
〔発明の概要〕
本発明は、回路素子間を細径ワイヤによって直接固相接
合して電気的に接続してなるものにおいて、前記ワイヤ
はＡｕ及びＡｇ等の貴金属でめっきした八〇及びＣｕワ
イヤであることを特徴とする電気的装置にある。
Ａｕめつきを施したＡｆｉ及びＣｕワイヤはＡｕワイヤ
と同じ高い耐食性を示す、これはワイヤの全面がＡｕで
覆われるためである。その他の貴金属、例えばＡｇ、Ｐ
ｔ、Ｐｄ等をめっきしたワイヤでもＡｕの場合と同様で
ある０本発明によって耐食性の低いＡＪ及びＣｕワイヤ
でも耐食性が良くなり、充分プラスチック封止に適用で
きる。次に、ＡΩワイヤとリードフレームとの接合部の
腐食については、ＡｕあるいはＡｇめっきしたワイヤを
用いることによって防止できる。リードフレームには前
述したように、ワイヤに超音波を印加して接続する０本
発明の貴金属、例えばＡｕやＡｇをめっきしたＡｕワイ
ヤは超音波によってめっきが剥離しない、したがって、
めっきした金属とＡｇめっきされているリードフレーム
との接触となるため接合強度も高く、腐食もしない、Ｃ
ｕワイヤの場合でも、本発明によって耐食性及び熱酸化
の問題も解消され、リードフレームとの接合性もＡｕを
用いた場合と同じように高信頼化される。
〔発明の実施例〕
実施例１ 第１図は本発明のＡｕでめっきしたＡｕワイヤで半導体
素子とリードフレームとを接続したプラスチック封止型
半導体装置の断面図である。ワイヤの直径は３０μｍで
、素子上には超音波によってボールボンディングされ、
リードフレームにはウェッジボンディングされている。
ボンダーは通常のＡＱ用を用いた。また、めっきは本実
施例のＡｕの他にＡｇ、Ｐｔ、Ｐｄ等でもＡｕと同様に
接続されたことも確認した。また、ワイヤがＣｕの場合
でも本実施例のＡＱと同様に接続できることも確認した
。１はＡｕめっきしたＡｕワイヤ、２はＡｇめつき、３
は４２合金リードフレーム。
４は半導体素子、５は４の半導体素子上に形成されたＡ
Ｑ蒸着膜による電極、６はレジンである。
実施例２ 第２図はＡｕめっきしたＡＱ及びＣｕワイヤの耐食性を
Ａｕワイヤと比較したものである。ワイヤの直径は３０
μｍである。耐食性の評価は半導体装置の耐湿信頼性試
験の中で最も一般的なプレッシャー・クツカー・テスト
（以下ＰＣＴと略す）で行った。腐食の程度はＰＣＴ後
のワイヤの引張破断強度を測定し、試験前の強度との比
を求めて表わした。図より、めっきしないＡＱ及びＣｕ
ワイヤは短時間で強度が劣化することから耐食性が低い
ことがわかる。一方、Ａｕ−ワイヤはＰＣＴｓｏｏｈ後
でも強度が劣化せず、著しく耐食性に優れている６本発
明のＡｕめっきした各ワイヤもＡｕと同様に高い耐食性
を示すことがわかる。
Ａｇ＋Ｐｔ及びＰｄめつきを施したＡＮ及びＣｕワイヤ
の耐食性もＡｕワイヤのそれと同じであることも確認し
た。以上の結果から、本発明のワイヤがＡｕと同様の耐
食性を有することが確認できた。
実施例３ 第３図はＡｕめっきしたＡ℃ワイヤをＡｇめっきされて
いるリードフレームにウェッジボンディングし、その接
合部の耐食性を調べた結果である。
耐食性の評価はＰＣＴ　（ｌｏｏｈ）で行ない、腐食の
程度はＰＣＴ後の接合部のせん断強度を測定し、試験前
の強度との比を求め、その劣化度で表わした。ワイヤの
直径は３０μｍである。図より、めっきを施していない
Ａｆｌワイヤとリードフレームとの接合部はＰＣＴ後の
強度が劣化していることから、著しく耐食性が低い、し
かし１本発明のワイヤを用いた場合は、はとんど腐食し
ないことが確認できた。なお、Ａｇめつきの場合も腐食
しないことも確認した。
実施例４ 第４図はＡｕめつきを施したＣｕワイヤをＡｇめつきを
施したリードフレームにウェッジボンディングし、その
接合部のせん断強度を測定した結果である。ワイヤの直
径は３０μｍである。図より、めっきをしないＣｕワイ
ヤはせん断強度が著しく低いことがわかる。しかし、本
発明のワイヤでは、高い強度を示すことが確認した。他
のめつき、すなわちＡｇｅ　ｐｔ、Ｐｄ等でも同じ結果
を得た。
実施例５ 第５図はＡｕめつきを施したＣｕワイヤをＡｇめつきを
施したリードフレームにウェッジボンディングした時の
圧着率（１００回ボンディングを試みて接合した率）ワ
イヤの直径は３０μｍである０図より、めっきをしない
Ｃｕワイヤの圧着率は５０％と著しく低いが１本発明の
ワイヤの圧着率は１００％と著しく向上することを確認
した。
【図面の簡単な説明】
第１図は本発明の一実施例の、ワイヤを適用したプラス
チック封止型半導体装置の断面図、第２図は本発明のワ
イヤの耐食性を従来のワイヤと比較した線図、第３図は
本発明のワイヤとリードフレームとの接合部の耐食性を
示した説明図、第４図は本発明のワイヤのウェッジボン
ディング部の接合強度を示した説明図、第５図は本発明
のワイヤのリードフレームとの圧着率を示した説明図で
ある。 １・・・ワイヤ、２・・・めっき、３・・・リードフレ
ーム、４・・・半導体素子、５・・・電極、６・・・レ
ジン６７，７代理人　弁理士　小川勝馬□・、 筋　１　口 ６　　　（＋ 第７巳 も３図 薬体口 も５図

Claims (1)

    【特許請求の範囲】
  1. １、回路素子間を細径ワイヤによつて固相接合して電気
    的に接続してなるものにおいて、前記ワイヤは貴金属で
    めつきされていることを特徴とする電気的装置。
JP60126122A 1985-06-12 1985-06-12 電気的装置 Pending JPS61285743A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60126122A JPS61285743A (ja) 1985-06-12 1985-06-12 電気的装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60126122A JPS61285743A (ja) 1985-06-12 1985-06-12 電気的装置

Publications (1)

Publication Number Publication Date
JPS61285743A true JPS61285743A (ja) 1986-12-16

Family

ID=14927192

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60126122A Pending JPS61285743A (ja) 1985-06-12 1985-06-12 電気的装置

Country Status (1)

Country Link
JP (1) JPS61285743A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63140062U (ja) * 1987-03-05 1988-09-14
WO2010147187A1 (ja) * 2009-06-18 2010-12-23 ローム株式会社 半導体装置
WO2011013527A1 (ja) 2009-07-30 2011-02-03 新日鉄マテリアルズ株式会社 半導体用ボンディングワイヤー
EP2779232A3 (en) * 2013-03-15 2014-12-03 Renesas Electronics Corporation Semiconductor device with a chip bonded to a lead frame with a sintered Ag layer, wherein a resin fillet covers the sintered Ag layer and a part of a side surface of the chip and wherein chip electrodes are bonded to leads, as well as method of manufacturing the same

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63140062U (ja) * 1987-03-05 1988-09-14
WO2010147187A1 (ja) * 2009-06-18 2010-12-23 ローム株式会社 半導体装置
CN102484080A (zh) * 2009-06-18 2012-05-30 罗姆股份有限公司 半导体装置
JPWO2010147187A1 (ja) * 2009-06-18 2012-12-06 ローム株式会社 半導体装置
TWI556392B (zh) * 2009-06-18 2016-11-01 羅姆股份有限公司 半導體裝置
US9780069B2 (en) 2009-06-18 2017-10-03 Rohm Co., Ltd. Semiconductor device
US10163850B2 (en) 2009-06-18 2018-12-25 Rohm Co., Ltd. Semiconductor device
WO2011013527A1 (ja) 2009-07-30 2011-02-03 新日鉄マテリアルズ株式会社 半導体用ボンディングワイヤー
KR20120035093A (ko) 2009-07-30 2012-04-13 가부시키가이샤 닛데쓰 마이크로 메탈 반도체용 본딩 와이어
US8742258B2 (en) 2009-07-30 2014-06-03 Nippon Steel & Sumikin Materials Co., Ltd. Bonding wire for semiconductor
EP2779232A3 (en) * 2013-03-15 2014-12-03 Renesas Electronics Corporation Semiconductor device with a chip bonded to a lead frame with a sintered Ag layer, wherein a resin fillet covers the sintered Ag layer and a part of a side surface of the chip and wherein chip electrodes are bonded to leads, as well as method of manufacturing the same

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