JPS6226171B2 - - Google Patents

Info

Publication number
JPS6226171B2
JPS6226171B2 JP56047072A JP4707281A JPS6226171B2 JP S6226171 B2 JPS6226171 B2 JP S6226171B2 JP 56047072 A JP56047072 A JP 56047072A JP 4707281 A JP4707281 A JP 4707281A JP S6226171 B2 JPS6226171 B2 JP S6226171B2
Authority
JP
Japan
Prior art keywords
reaction tube
growth
vapor phase
phase growth
tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56047072A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57162326A (en
Inventor
Masaharu Nogami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4707281A priority Critical patent/JPS57162326A/ja
Publication of JPS57162326A publication Critical patent/JPS57162326A/ja
Publication of JPS6226171B2 publication Critical patent/JPS6226171B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP4707281A 1981-03-30 1981-03-30 Vapor phase growing device Granted JPS57162326A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4707281A JPS57162326A (en) 1981-03-30 1981-03-30 Vapor phase growing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4707281A JPS57162326A (en) 1981-03-30 1981-03-30 Vapor phase growing device

Publications (2)

Publication Number Publication Date
JPS57162326A JPS57162326A (en) 1982-10-06
JPS6226171B2 true JPS6226171B2 (enrdf_load_stackoverflow) 1987-06-08

Family

ID=12764957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4707281A Granted JPS57162326A (en) 1981-03-30 1981-03-30 Vapor phase growing device

Country Status (1)

Country Link
JP (1) JPS57162326A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60193323A (ja) * 1984-03-15 1985-10-01 Nec Corp 半導体気相成長装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52149968A (en) * 1976-06-09 1977-12-13 Hitachi Ltd Heat treatment method of semiconductor wafers
JPS5534158A (en) * 1978-09-01 1980-03-10 Sony Corp Vacuum reaction apparatus

Also Published As

Publication number Publication date
JPS57162326A (en) 1982-10-06

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