JPS57162326A - Vapor phase growing device - Google Patents

Vapor phase growing device

Info

Publication number
JPS57162326A
JPS57162326A JP4707281A JP4707281A JPS57162326A JP S57162326 A JPS57162326 A JP S57162326A JP 4707281 A JP4707281 A JP 4707281A JP 4707281 A JP4707281 A JP 4707281A JP S57162326 A JPS57162326 A JP S57162326A
Authority
JP
Japan
Prior art keywords
tube
reaction tube
vapor phase
diameter
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4707281A
Other languages
Japanese (ja)
Other versions
JPS6226171B2 (en
Inventor
Masaharu Nogami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4707281A priority Critical patent/JPS57162326A/en
Publication of JPS57162326A publication Critical patent/JPS57162326A/en
Publication of JPS6226171B2 publication Critical patent/JPS6226171B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To prevent the mixture of contamination source to a growing region by increasing the diameter of a reaction tube at the downstream side of gas flow from the position of a substrate crystal larger than the diameter of a reaction tube at the upstream side including the region placed with the crystal. CONSTITUTION:The diameter of a reaction tube at the downstream side from the position of a substrate crystal is increased larger than that of a reaction tube at the upstream side including a region placed with a substrate crystal 25 with respect to the gas flow direction of a reaction tube 22 for vapor phase growth. For example, the inner diameter of the reaction tube is formed 45phi from the downstream side 10cm of the position of the crystal 25 with respect to the gas flowing direction of the reaction tube 22 for GaAs vapor phase growth of inner diameter 40phi, and an auxiliary liner tube 26 having 40phi of inner diameter and 2mm. of thickness is inserted into this part. Before the growth starts, when the tube 23 is inserted into the tube 22, the tube 26 is replaced with new one, and the tube 23 is then inserted into the tube 22.
JP4707281A 1981-03-30 1981-03-30 Vapor phase growing device Granted JPS57162326A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4707281A JPS57162326A (en) 1981-03-30 1981-03-30 Vapor phase growing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4707281A JPS57162326A (en) 1981-03-30 1981-03-30 Vapor phase growing device

Publications (2)

Publication Number Publication Date
JPS57162326A true JPS57162326A (en) 1982-10-06
JPS6226171B2 JPS6226171B2 (en) 1987-06-08

Family

ID=12764957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4707281A Granted JPS57162326A (en) 1981-03-30 1981-03-30 Vapor phase growing device

Country Status (1)

Country Link
JP (1) JPS57162326A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60193323A (en) * 1984-03-15 1985-10-01 Nec Corp Semiconductor vapor phase growing apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52149968A (en) * 1976-06-09 1977-12-13 Hitachi Ltd Heat treatment method of semiconductor wafers
JPS5534158A (en) * 1978-09-01 1980-03-10 Sony Corp Vacuum reaction apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52149968A (en) * 1976-06-09 1977-12-13 Hitachi Ltd Heat treatment method of semiconductor wafers
JPS5534158A (en) * 1978-09-01 1980-03-10 Sony Corp Vacuum reaction apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60193323A (en) * 1984-03-15 1985-10-01 Nec Corp Semiconductor vapor phase growing apparatus

Also Published As

Publication number Publication date
JPS6226171B2 (en) 1987-06-08

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