JPS6226120B2 - - Google Patents
Info
- Publication number
- JPS6226120B2 JPS6226120B2 JP56169251A JP16925181A JPS6226120B2 JP S6226120 B2 JPS6226120 B2 JP S6226120B2 JP 56169251 A JP56169251 A JP 56169251A JP 16925181 A JP16925181 A JP 16925181A JP S6226120 B2 JPS6226120 B2 JP S6226120B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit section
- data
- row
- read
- semiconductor memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011159 matrix material Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 15
- 238000012937 correction Methods 0.000 claims description 12
- 238000010586 diagram Methods 0.000 description 6
- 230000004913 activation Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000003111 delayed effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56169251A JPS5870500A (ja) | 1981-10-21 | 1981-10-21 | 半導体記憶回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56169251A JPS5870500A (ja) | 1981-10-21 | 1981-10-21 | 半導体記憶回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5870500A JPS5870500A (ja) | 1983-04-26 |
| JPS6226120B2 true JPS6226120B2 (enrdf_load_stackoverflow) | 1987-06-06 |
Family
ID=15883042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56169251A Granted JPS5870500A (ja) | 1981-10-21 | 1981-10-21 | 半導体記憶回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5870500A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0821238B2 (ja) * | 1987-11-12 | 1996-03-04 | 三菱電機株式会社 | 半導体記憶装置 |
| JPH02257498A (ja) * | 1988-12-27 | 1990-10-18 | Nec Corp | 集積回路 |
| JP2627491B2 (ja) * | 1994-11-18 | 1997-07-09 | 三菱電機株式会社 | 半導体記憶装置 |
-
1981
- 1981-10-21 JP JP56169251A patent/JPS5870500A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5870500A (ja) | 1983-04-26 |
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