JPS6225459A - 不揮発性半導体記憶装置 - Google Patents
不揮発性半導体記憶装置Info
- Publication number
- JPS6225459A JPS6225459A JP16478185A JP16478185A JPS6225459A JP S6225459 A JPS6225459 A JP S6225459A JP 16478185 A JP16478185 A JP 16478185A JP 16478185 A JP16478185 A JP 16478185A JP S6225459 A JPS6225459 A JP S6225459A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- impurity
- floating gate
- gates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 37
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000012535 impurity Substances 0.000 claims description 53
- 230000004888 barrier function Effects 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 5
- 238000005192 partition Methods 0.000 claims description 5
- 238000003860 storage Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 abstract description 90
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 13
- 238000005530 etching Methods 0.000 abstract description 7
- 230000010354 integration Effects 0.000 abstract description 3
- 239000002344 surface layer Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000010405 reoxidation reaction Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 241000272814 Anser sp. Species 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16478185A JPS6225459A (ja) | 1985-07-25 | 1985-07-25 | 不揮発性半導体記憶装置 |
| US06/887,625 US4774556A (en) | 1985-07-25 | 1986-07-21 | Non-volatile semiconductor memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16478185A JPS6225459A (ja) | 1985-07-25 | 1985-07-25 | 不揮発性半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6225459A true JPS6225459A (ja) | 1987-02-03 |
| JPH0587030B2 JPH0587030B2 (de) | 1993-12-15 |
Family
ID=15799825
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16478185A Granted JPS6225459A (ja) | 1985-07-25 | 1985-07-25 | 不揮発性半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6225459A (de) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62269363A (ja) * | 1986-05-19 | 1987-11-21 | Nec Corp | 半導体記憶装置の製造方法 |
| JPS645071A (en) * | 1987-06-29 | 1989-01-10 | Toshiba Corp | Semiconductor storage device |
| JPS6453577A (en) * | 1987-08-25 | 1989-03-01 | Toshiba Corp | Nonvolatile semiconductor device and manufacture thereof |
| US6157061A (en) * | 1997-08-29 | 2000-12-05 | Nec Corporation | Nonvolatile semiconductor memory device and method of manufacturing the same |
| KR100346021B1 (ko) * | 1997-06-27 | 2002-09-18 | 닛본 덴기 가부시끼가이샤 | 불휘발성반도체메모리 |
| JP2006128703A (ja) * | 2004-10-28 | 2006-05-18 | Samsung Electronics Co Ltd | マルチビット不揮発性メモリセルを含む半導体素子及びその製造方法 |
| JP2007235120A (ja) * | 2006-02-03 | 2007-09-13 | Denso Corp | 半導体装置 |
| JP2008141196A (ja) * | 2006-11-30 | 2008-06-19 | Dongbu Hitek Co Ltd | フラッシュメモリ素子 |
-
1985
- 1985-07-25 JP JP16478185A patent/JPS6225459A/ja active Granted
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62269363A (ja) * | 1986-05-19 | 1987-11-21 | Nec Corp | 半導体記憶装置の製造方法 |
| JPS645071A (en) * | 1987-06-29 | 1989-01-10 | Toshiba Corp | Semiconductor storage device |
| JPS6453577A (en) * | 1987-08-25 | 1989-03-01 | Toshiba Corp | Nonvolatile semiconductor device and manufacture thereof |
| EP0304896A2 (de) * | 1987-08-25 | 1989-03-01 | Kabushiki Kaisha Toshiba | Nichtflüchtige Halbleiterspeicheranordnung und Verfahren zu ihrer Herstellung |
| KR100346021B1 (ko) * | 1997-06-27 | 2002-09-18 | 닛본 덴기 가부시끼가이샤 | 불휘발성반도체메모리 |
| US6157061A (en) * | 1997-08-29 | 2000-12-05 | Nec Corporation | Nonvolatile semiconductor memory device and method of manufacturing the same |
| JP2006128703A (ja) * | 2004-10-28 | 2006-05-18 | Samsung Electronics Co Ltd | マルチビット不揮発性メモリセルを含む半導体素子及びその製造方法 |
| JP2007235120A (ja) * | 2006-02-03 | 2007-09-13 | Denso Corp | 半導体装置 |
| JP2008141196A (ja) * | 2006-11-30 | 2008-06-19 | Dongbu Hitek Co Ltd | フラッシュメモリ素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0587030B2 (de) | 1993-12-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |