JPS6225269B2 - - Google Patents

Info

Publication number
JPS6225269B2
JPS6225269B2 JP54062992A JP6299279A JPS6225269B2 JP S6225269 B2 JPS6225269 B2 JP S6225269B2 JP 54062992 A JP54062992 A JP 54062992A JP 6299279 A JP6299279 A JP 6299279A JP S6225269 B2 JPS6225269 B2 JP S6225269B2
Authority
JP
Japan
Prior art keywords
base
collector
region
contact
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54062992A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55154760A (en
Inventor
Sadaji Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP6299279A priority Critical patent/JPS55154760A/ja
Publication of JPS55154760A publication Critical patent/JPS55154760A/ja
Publication of JPS6225269B2 publication Critical patent/JPS6225269B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617Combinations of vertical BJTs and only diodes

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP6299279A 1979-05-22 1979-05-22 Semiconductor device Granted JPS55154760A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6299279A JPS55154760A (en) 1979-05-22 1979-05-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6299279A JPS55154760A (en) 1979-05-22 1979-05-22 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55154760A JPS55154760A (en) 1980-12-02
JPS6225269B2 true JPS6225269B2 (enrdf_load_html_response) 1987-06-02

Family

ID=13216366

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6299279A Granted JPS55154760A (en) 1979-05-22 1979-05-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55154760A (enrdf_load_html_response)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6762094B2 (en) * 2002-09-27 2004-07-13 Hewlett-Packard Development Company, L.P. Nanometer-scale semiconductor devices and method of making

Also Published As

Publication number Publication date
JPS55154760A (en) 1980-12-02

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