JPS62238658A - 半導体集積回路装置の製造方法 - Google Patents
半導体集積回路装置の製造方法Info
- Publication number
- JPS62238658A JPS62238658A JP8270486A JP8270486A JPS62238658A JP S62238658 A JPS62238658 A JP S62238658A JP 8270486 A JP8270486 A JP 8270486A JP 8270486 A JP8270486 A JP 8270486A JP S62238658 A JPS62238658 A JP S62238658A
- Authority
- JP
- Japan
- Prior art keywords
- polysilicon
- layer
- oxide film
- layers
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 24
- 229920005591 polysilicon Polymers 0.000 claims abstract description 24
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 239000003870 refractory metal Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 11
- 238000009966 trimming Methods 0.000 abstract description 9
- 229910052782 aluminium Inorganic materials 0.000 abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052796 boron Inorganic materials 0.000 abstract description 2
- 239000012535 impurity Substances 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910021339 platinum silicide Inorganic materials 0.000 abstract 2
- 235000010210 aluminium Nutrition 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8270486A JPS62238658A (ja) | 1986-04-09 | 1986-04-09 | 半導体集積回路装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8270486A JPS62238658A (ja) | 1986-04-09 | 1986-04-09 | 半導体集積回路装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62238658A true JPS62238658A (ja) | 1987-10-19 |
| JPH0553072B2 JPH0553072B2 (enrdf_load_stackoverflow) | 1993-08-09 |
Family
ID=13781786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8270486A Granted JPS62238658A (ja) | 1986-04-09 | 1986-04-09 | 半導体集積回路装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62238658A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04365351A (ja) * | 1991-06-13 | 1992-12-17 | Nec Corp | 半導体集積回路装置 |
| EP0857357A4 (en) * | 1995-09-29 | 1999-03-17 | Intel Corp | A silicide agglomeration fuse device |
| US7781280B2 (en) | 2003-10-24 | 2010-08-24 | Yamaha Corporation | Semiconductor device with capacitor and fuse and its manufacture method |
| JP2011222691A (ja) * | 2010-04-08 | 2011-11-04 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
| WO2016021061A1 (ja) * | 2014-08-08 | 2016-02-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5860560A (ja) * | 1981-10-07 | 1983-04-11 | Toshiba Corp | 半導体装置の冗長回路およびそのフユ−ズ部切断方法 |
| JPS6015966A (ja) * | 1983-07-07 | 1985-01-26 | Fujitsu Ltd | 半導体記憶装置 |
-
1986
- 1986-04-09 JP JP8270486A patent/JPS62238658A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5860560A (ja) * | 1981-10-07 | 1983-04-11 | Toshiba Corp | 半導体装置の冗長回路およびそのフユ−ズ部切断方法 |
| JPS6015966A (ja) * | 1983-07-07 | 1985-01-26 | Fujitsu Ltd | 半導体記憶装置 |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04365351A (ja) * | 1991-06-13 | 1992-12-17 | Nec Corp | 半導体集積回路装置 |
| EP0857357A4 (en) * | 1995-09-29 | 1999-03-17 | Intel Corp | A silicide agglomeration fuse device |
| US7781280B2 (en) | 2003-10-24 | 2010-08-24 | Yamaha Corporation | Semiconductor device with capacitor and fuse and its manufacture method |
| US7838358B2 (en) | 2003-10-24 | 2010-11-23 | Yamaha Corporation | Semiconductor device with capacitor and fuse and its manufacture method |
| US8164120B2 (en) | 2003-10-24 | 2012-04-24 | Yamaha Corporation | Semiconductor device with capacitor and fuse and its manufacture |
| JP2011222691A (ja) * | 2010-04-08 | 2011-11-04 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
| WO2016021061A1 (ja) * | 2014-08-08 | 2016-02-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JPWO2016021061A1 (ja) * | 2014-08-08 | 2017-04-27 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US10229878B2 (en) | 2014-08-08 | 2019-03-12 | Renesas Electronics Corporation | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0553072B2 (enrdf_load_stackoverflow) | 1993-08-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |