JPS6221277B2 - - Google Patents
Info
- Publication number
- JPS6221277B2 JPS6221277B2 JP1891179A JP1891179A JPS6221277B2 JP S6221277 B2 JPS6221277 B2 JP S6221277B2 JP 1891179 A JP1891179 A JP 1891179A JP 1891179 A JP1891179 A JP 1891179A JP S6221277 B2 JPS6221277 B2 JP S6221277B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type semiconductor
- semiconductor layer
- thyristor
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 238000004904 shortening Methods 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Landscapes
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1891179A JPS55111169A (en) | 1979-02-19 | 1979-02-19 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1891179A JPS55111169A (en) | 1979-02-19 | 1979-02-19 | Method of manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55111169A JPS55111169A (en) | 1980-08-27 |
| JPS6221277B2 true JPS6221277B2 (enrdf_load_stackoverflow) | 1987-05-12 |
Family
ID=11984781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1891179A Granted JPS55111169A (en) | 1979-02-19 | 1979-02-19 | Method of manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55111169A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63260174A (ja) * | 1987-04-17 | 1988-10-27 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
-
1979
- 1979-02-19 JP JP1891179A patent/JPS55111169A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55111169A (en) | 1980-08-27 |
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