JPS62204575A - 薄膜半導体装置およびその製造方法 - Google Patents

薄膜半導体装置およびその製造方法

Info

Publication number
JPS62204575A
JPS62204575A JP61047842A JP4784286A JPS62204575A JP S62204575 A JPS62204575 A JP S62204575A JP 61047842 A JP61047842 A JP 61047842A JP 4784286 A JP4784286 A JP 4784286A JP S62204575 A JPS62204575 A JP S62204575A
Authority
JP
Japan
Prior art keywords
silicon nitride
film
semiconductor device
thin film
hydrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61047842A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0556872B2 (enrdf_load_stackoverflow
Inventor
Ryuma Hirano
龍馬 平野
Masatoshi Kitagawa
雅俊 北川
Shinichiro Ishihara
伸一郎 石原
Takashi Hirao
孝 平尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP61047842A priority Critical patent/JPS62204575A/ja
Publication of JPS62204575A publication Critical patent/JPS62204575A/ja
Publication of JPH0556872B2 publication Critical patent/JPH0556872B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Formation Of Insulating Films (AREA)
JP61047842A 1986-03-05 1986-03-05 薄膜半導体装置およびその製造方法 Granted JPS62204575A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61047842A JPS62204575A (ja) 1986-03-05 1986-03-05 薄膜半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61047842A JPS62204575A (ja) 1986-03-05 1986-03-05 薄膜半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS62204575A true JPS62204575A (ja) 1987-09-09
JPH0556872B2 JPH0556872B2 (enrdf_load_stackoverflow) 1993-08-20

Family

ID=12786620

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61047842A Granted JPS62204575A (ja) 1986-03-05 1986-03-05 薄膜半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPS62204575A (enrdf_load_stackoverflow)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01185926A (ja) * 1988-01-20 1989-07-25 Nec Corp 窒化シリコン膜の製造方法
JPH029129A (ja) * 1988-06-28 1990-01-12 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH02103936A (ja) * 1988-10-13 1990-04-17 Mitsubishi Electric Corp 半導体装置
JPH02187030A (ja) * 1989-01-13 1990-07-23 Kawasaki Steel Corp 半導体装置への保護膜の形成方法
US6693301B2 (en) 1991-10-16 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving and manufacturing the same
US6713783B1 (en) 1991-03-15 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Compensating electro-optical device including thin film transistors
US7071910B1 (en) 1991-10-16 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device and method of driving and manufacturing the same
US7116302B2 (en) 1991-10-16 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Process of operating active matrix display device having thin film transistors
US7253440B1 (en) 1991-10-16 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having at least first and second thin film transistors
US8183135B2 (en) 2003-03-13 2012-05-22 Nec Corporation Method for manufacturing thin film transistor having hydrogen feeding layer formed between a metal gate and a gate insulating film
WO2013179837A1 (ja) * 2012-05-28 2013-12-05 シャープ株式会社 半導体装置およびその製造方法
WO2016035627A1 (ja) * 2014-09-02 2016-03-10 シャープ株式会社 半導体装置及び半導体装置の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55128851A (en) * 1979-03-28 1980-10-06 Hitachi Ltd Semiconductor memory device
JPS60136259A (ja) * 1983-12-24 1985-07-19 Sony Corp 電界効果型トランジスタの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55128851A (en) * 1979-03-28 1980-10-06 Hitachi Ltd Semiconductor memory device
JPS60136259A (ja) * 1983-12-24 1985-07-19 Sony Corp 電界効果型トランジスタの製造方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01185926A (ja) * 1988-01-20 1989-07-25 Nec Corp 窒化シリコン膜の製造方法
JPH029129A (ja) * 1988-06-28 1990-01-12 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH02103936A (ja) * 1988-10-13 1990-04-17 Mitsubishi Electric Corp 半導体装置
JPH02187030A (ja) * 1989-01-13 1990-07-23 Kawasaki Steel Corp 半導体装置への保護膜の形成方法
US6713783B1 (en) 1991-03-15 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Compensating electro-optical device including thin film transistors
US6759680B1 (en) 1991-10-16 2004-07-06 Semiconductor Energy Laboratory Co., Ltd. Display device having thin film transistors
US6693301B2 (en) 1991-10-16 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving and manufacturing the same
US7071910B1 (en) 1991-10-16 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device and method of driving and manufacturing the same
US7116302B2 (en) 1991-10-16 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Process of operating active matrix display device having thin film transistors
US7253440B1 (en) 1991-10-16 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having at least first and second thin film transistors
US8183135B2 (en) 2003-03-13 2012-05-22 Nec Corporation Method for manufacturing thin film transistor having hydrogen feeding layer formed between a metal gate and a gate insulating film
WO2013179837A1 (ja) * 2012-05-28 2013-12-05 シャープ株式会社 半導体装置およびその製造方法
CN104335332A (zh) * 2012-05-28 2015-02-04 夏普株式会社 半导体装置及其制造方法
WO2016035627A1 (ja) * 2014-09-02 2016-03-10 シャープ株式会社 半導体装置及び半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0556872B2 (enrdf_load_stackoverflow) 1993-08-20

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