JPS6213813B2 - - Google Patents

Info

Publication number
JPS6213813B2
JPS6213813B2 JP5577278A JP5577278A JPS6213813B2 JP S6213813 B2 JPS6213813 B2 JP S6213813B2 JP 5577278 A JP5577278 A JP 5577278A JP 5577278 A JP5577278 A JP 5577278A JP S6213813 B2 JPS6213813 B2 JP S6213813B2
Authority
JP
Japan
Prior art keywords
photoresist
negative
positive
resist layer
sensitive resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5577278A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54146966A (en
Inventor
Hiroshi Koshimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP5577278A priority Critical patent/JPS54146966A/ja
Publication of JPS54146966A publication Critical patent/JPS54146966A/ja
Publication of JPS6213813B2 publication Critical patent/JPS6213813B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
JP5577278A 1978-05-10 1978-05-10 Pattern forming method Granted JPS54146966A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5577278A JPS54146966A (en) 1978-05-10 1978-05-10 Pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5577278A JPS54146966A (en) 1978-05-10 1978-05-10 Pattern forming method

Publications (2)

Publication Number Publication Date
JPS54146966A JPS54146966A (en) 1979-11-16
JPS6213813B2 true JPS6213813B2 (enrdf_load_stackoverflow) 1987-03-28

Family

ID=13008156

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5577278A Granted JPS54146966A (en) 1978-05-10 1978-05-10 Pattern forming method

Country Status (1)

Country Link
JP (1) JPS54146966A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03108619U (enrdf_load_stackoverflow) * 1990-02-23 1991-11-08

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56111226A (en) * 1980-02-07 1981-09-02 Nippon Telegr & Teleph Corp <Ntt> Formation of fine pattern
JPS5842231A (ja) * 1981-09-08 1983-03-11 Fujitsu Ltd パターン形成方法
JPS58100428A (ja) * 1981-12-10 1983-06-15 Matsushita Electronics Corp パタ−ン形成方法
JPS61214435A (ja) * 1985-03-19 1986-09-24 Rohm Co Ltd 半導体のホトリソグラフィー方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03108619U (enrdf_load_stackoverflow) * 1990-02-23 1991-11-08

Also Published As

Publication number Publication date
JPS54146966A (en) 1979-11-16

Similar Documents

Publication Publication Date Title
US6514672B2 (en) Dry development process for a bi-layer resist system
JPH02177355A (ja) フォトレジストエッチバック技術を利用したトレンチキャパシタ形成方法
US5922516A (en) Bi-layer silylation process
JPH09321023A (ja) 金属配線の形成方法
JPS6213813B2 (enrdf_load_stackoverflow)
US3767492A (en) Semiconductor masking
US5064748A (en) Method for anisotropically hardening a protective coating for integrated circuit manufacture
JPH0466345B2 (enrdf_load_stackoverflow)
JPH0458167B2 (enrdf_load_stackoverflow)
JPH04176123A (ja) 半導体装置の製造方法
JP2902513B2 (ja) レジストパターン形成方法
JP3660280B2 (ja) 微細レジストパターンの形成方法
JPS59141228A (ja) 微細パタ−ン形成方法
JPS59161827A (ja) 絶縁膜加工法
JPS6386434A (ja) レジストパタ−ン形成方法
JP2005114973A (ja) 微細レジストパターンの形成方法
JPS60247927A (ja) パタ−ン形成方法
JPH0313583B2 (enrdf_load_stackoverflow)
JPS58132927A (ja) パタ−ン形成方法
JPH03188447A (ja) レジストパターンの形成方法
JPS6054775B2 (ja) ドライ現像方法
JPH0143453B2 (enrdf_load_stackoverflow)
JPH01137634A (ja) 半導体装置の製造方法
JPS6354726A (ja) レジスト膜のエツチング方法
JPS63215040A (ja) レジストのハ−ドニング方法