JPS62123098A - シリコン単結晶の製造方法 - Google Patents
シリコン単結晶の製造方法Info
- Publication number
- JPS62123098A JPS62123098A JP26135185A JP26135185A JPS62123098A JP S62123098 A JPS62123098 A JP S62123098A JP 26135185 A JP26135185 A JP 26135185A JP 26135185 A JP26135185 A JP 26135185A JP S62123098 A JPS62123098 A JP S62123098A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- silicon single
- single crystal
- oxidation
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 22
- 239000010703 silicon Substances 0.000 title claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 239000007789 gas Substances 0.000 claims abstract description 36
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 239000011261 inert gas Substances 0.000 claims abstract description 6
- 230000007547 defect Effects 0.000 abstract description 14
- 230000000694 effects Effects 0.000 abstract description 11
- 230000003647 oxidation Effects 0.000 description 23
- 238000007254 oxidation reaction Methods 0.000 description 23
- 238000010438 heat treatment Methods 0.000 description 22
- 235000012431 wafers Nutrition 0.000 description 15
- 238000011282 treatment Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 238000000137 annealing Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26135185A JPS62123098A (ja) | 1985-11-22 | 1985-11-22 | シリコン単結晶の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26135185A JPS62123098A (ja) | 1985-11-22 | 1985-11-22 | シリコン単結晶の製造方法 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6232516A Division JP2652344B2 (ja) | 1994-09-02 | 1994-09-02 | シリコンウエーハ |
| JP6234476A Division JP2652346B2 (ja) | 1994-09-05 | 1994-09-05 | シリコンウエーハの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62123098A true JPS62123098A (ja) | 1987-06-04 |
| JPH0561240B2 JPH0561240B2 (enrdf_load_stackoverflow) | 1993-09-03 |
Family
ID=17360634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26135185A Granted JPS62123098A (ja) | 1985-11-22 | 1985-11-22 | シリコン単結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62123098A (enrdf_load_stackoverflow) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01183825A (ja) * | 1988-01-19 | 1989-07-21 | Sanyo Electric Co Ltd | 単結晶シリコン膜の形成方法 |
| JPH03233936A (ja) * | 1990-02-08 | 1991-10-17 | Mitsubishi Materials Corp | シリコンウエーハの製造方法 |
| JPH04285099A (ja) * | 1991-03-15 | 1992-10-09 | Shin Etsu Handotai Co Ltd | Ｓｉ単結晶ウエーハの熱処理方法 |
| JPH06183900A (ja) * | 1990-12-14 | 1994-07-05 | Hughes Aircraft Co | ガス相から固体への注入 |
| US6121117A (en) * | 1992-01-30 | 2000-09-19 | Canon Kabushiki Kaisha | Process for producing semiconductor substrate by heat treating |
| US6313014B1 (en) | 1998-06-18 | 2001-11-06 | Canon Kabushiki Kaisha | Semiconductor substrate and manufacturing method of semiconductor substrate |
| JP2003332344A (ja) * | 2002-03-05 | 2003-11-21 | Sumitomo Mitsubishi Silicon Corp | シリコン単結晶層の製造方法及びシリコン単結晶層 |
| US6809015B2 (en) | 1998-12-28 | 2004-10-26 | Shin-Etsu Handotai Co., Ltd. | Method for heat treatment of silicon wafers and silicon wafer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51134071A (en) * | 1975-05-16 | 1976-11-20 | Nippon Denshi Kinzoku Kk | Method to eliminate crystal defects of silicon |
| JPS5885534A (ja) * | 1981-11-18 | 1983-05-21 | Komatsu Denshi Kinzoku Kk | 半導体シリコン基板の製造法 |
| JPS58164229A (ja) * | 1982-03-25 | 1983-09-29 | Sony Corp | 半導体基板処理法 |
| JPS59202640A (ja) * | 1983-05-02 | 1984-11-16 | Toshiba Corp | 半導体ウエハの処理方法 |
-
1985
- 1985-11-22 JP JP26135185A patent/JPS62123098A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51134071A (en) * | 1975-05-16 | 1976-11-20 | Nippon Denshi Kinzoku Kk | Method to eliminate crystal defects of silicon |
| JPS5885534A (ja) * | 1981-11-18 | 1983-05-21 | Komatsu Denshi Kinzoku Kk | 半導体シリコン基板の製造法 |
| JPS58164229A (ja) * | 1982-03-25 | 1983-09-29 | Sony Corp | 半導体基板処理法 |
| JPS59202640A (ja) * | 1983-05-02 | 1984-11-16 | Toshiba Corp | 半導体ウエハの処理方法 |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01183825A (ja) * | 1988-01-19 | 1989-07-21 | Sanyo Electric Co Ltd | 単結晶シリコン膜の形成方法 |
| JPH03233936A (ja) * | 1990-02-08 | 1991-10-17 | Mitsubishi Materials Corp | シリコンウエーハの製造方法 |
| JPH06183900A (ja) * | 1990-12-14 | 1994-07-05 | Hughes Aircraft Co | ガス相から固体への注入 |
| JPH04285099A (ja) * | 1991-03-15 | 1992-10-09 | Shin Etsu Handotai Co Ltd | Ｓｉ単結晶ウエーハの熱処理方法 |
| US6121117A (en) * | 1992-01-30 | 2000-09-19 | Canon Kabushiki Kaisha | Process for producing semiconductor substrate by heat treating |
| US6313014B1 (en) | 1998-06-18 | 2001-11-06 | Canon Kabushiki Kaisha | Semiconductor substrate and manufacturing method of semiconductor substrate |
| US6809015B2 (en) | 1998-12-28 | 2004-10-26 | Shin-Etsu Handotai Co., Ltd. | Method for heat treatment of silicon wafers and silicon wafer |
| US7011717B2 (en) | 1998-12-28 | 2006-03-14 | Shin-Etsu Handotai Co., Ltd. | Method for heat treatment of silicon wafers and silicon wafer |
| JP2003332344A (ja) * | 2002-03-05 | 2003-11-21 | Sumitomo Mitsubishi Silicon Corp | シリコン単結晶層の製造方法及びシリコン単結晶層 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0561240B2 (enrdf_load_stackoverflow) | 1993-09-03 |
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