JPH0341437B2 - - Google Patents

Info

Publication number
JPH0341437B2
JPH0341437B2 JP55088878A JP8887880A JPH0341437B2 JP H0341437 B2 JPH0341437 B2 JP H0341437B2 JP 55088878 A JP55088878 A JP 55088878A JP 8887880 A JP8887880 A JP 8887880A JP H0341437 B2 JPH0341437 B2 JP H0341437B2
Authority
JP
Japan
Prior art keywords
single crystal
silicon single
silicon
nitrogen
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55088878A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5717497A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8887880A priority Critical patent/JPS5717497A/ja
Publication of JPS5717497A publication Critical patent/JPS5717497A/ja
Publication of JPH0341437B2 publication Critical patent/JPH0341437B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP8887880A 1980-06-30 1980-06-30 Manufacture of silicon single crystal Granted JPS5717497A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8887880A JPS5717497A (en) 1980-06-30 1980-06-30 Manufacture of silicon single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8887880A JPS5717497A (en) 1980-06-30 1980-06-30 Manufacture of silicon single crystal

Publications (2)

Publication Number Publication Date
JPS5717497A JPS5717497A (en) 1982-01-29
JPH0341437B2 true JPH0341437B2 (enrdf_load_stackoverflow) 1991-06-24

Family

ID=13955252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8887880A Granted JPS5717497A (en) 1980-06-30 1980-06-30 Manufacture of silicon single crystal

Country Status (1)

Country Link
JP (1) JPS5717497A (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4591409A (en) * 1984-05-03 1986-05-27 Texas Instruments Incorporated Control of nitrogen and/or oxygen in silicon via nitride oxide pressure during crystal growth
JPS60251190A (ja) * 1984-05-25 1985-12-11 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法
JPH033244A (ja) * 1989-05-30 1991-01-09 Shin Etsu Handotai Co Ltd 半導体シリコン基板の熱処理方法
JP2785585B2 (ja) * 1992-04-21 1998-08-13 信越半導体株式会社 シリコン単結晶の製造方法
JP2742247B2 (ja) * 1995-04-27 1998-04-22 信越半導体株式会社 シリコン単結晶基板の製造方法および品質管理方法
US6548886B1 (en) 1998-05-01 2003-04-15 Wacker Nsce Corporation Silicon semiconductor wafer and method for producing the same
JP2000082679A (ja) 1998-07-08 2000-03-21 Canon Inc 半導体基板とその作製方法
DE10014650A1 (de) 2000-03-24 2001-10-04 Wacker Siltronic Halbleitermat Halbleiterscheibe aus Silicium und Verfahren zur Herstellung der Halbleiterscheibe
CN103436951A (zh) * 2013-08-27 2013-12-11 天津市环欧半导体材料技术有限公司 一种区熔硅单晶的拉制方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE788026A (fr) * 1971-08-26 1973-02-26 Siemens Ag Procede et dispositif d'introduction dirigee de matieres de dopage dansdes cristaux semiconducteurs lors d'une fusion par zones sans creuset

Also Published As

Publication number Publication date
JPS5717497A (en) 1982-01-29

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