JPS5717497A - Manufacture of silicon single crystal - Google Patents
Manufacture of silicon single crystalInfo
- Publication number
- JPS5717497A JPS5717497A JP8887880A JP8887880A JPS5717497A JP S5717497 A JPS5717497 A JP S5717497A JP 8887880 A JP8887880 A JP 8887880A JP 8887880 A JP8887880 A JP 8887880A JP S5717497 A JPS5717497 A JP S5717497A
- Authority
- JP
- Japan
- Prior art keywords
- nitrogen
- single crystal
- contg
- silicon single
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title abstract 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 4
- 229910052710 silicon Inorganic materials 0.000 title abstract 4
- 239000010703 silicon Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 6
- 239000007789 gas Substances 0.000 abstract 5
- 150000001875 compounds Chemical class 0.000 abstract 3
- 229910052757 nitrogen Inorganic materials 0.000 abstract 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 125000004433 nitrogen atom Chemical group N* 0.000 abstract 2
- 229910021529 ammonia Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8887880A JPS5717497A (en) | 1980-06-30 | 1980-06-30 | Manufacture of silicon single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8887880A JPS5717497A (en) | 1980-06-30 | 1980-06-30 | Manufacture of silicon single crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5717497A true JPS5717497A (en) | 1982-01-29 |
JPH0341437B2 JPH0341437B2 (enrdf_load_stackoverflow) | 1991-06-24 |
Family
ID=13955252
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8887880A Granted JPS5717497A (en) | 1980-06-30 | 1980-06-30 | Manufacture of silicon single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5717497A (enrdf_load_stackoverflow) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60251190A (ja) * | 1984-05-25 | 1985-12-11 | Shin Etsu Handotai Co Ltd | シリコン単結晶の製造方法 |
JPS6117495A (ja) * | 1984-05-03 | 1986-01-25 | テキサス インスツルメンツ インコ−ポレイテツド | シリコン単結晶を形成する方法 |
JPH033244A (ja) * | 1989-05-30 | 1991-01-09 | Shin Etsu Handotai Co Ltd | 半導体シリコン基板の熱処理方法 |
JPH05294780A (ja) * | 1992-04-21 | 1993-11-09 | Shin Etsu Handotai Co Ltd | シリコン単結晶の製造方法 |
JPH0891993A (ja) * | 1995-04-27 | 1996-04-09 | Shin Etsu Handotai Co Ltd | シリコン単結晶基板の製造方法および品質管理方法 |
US6350703B1 (en) | 1998-07-08 | 2002-02-26 | Canon Kabushiki Kaisha | Semiconductor substrate and production method thereof |
US6548886B1 (en) | 1998-05-01 | 2003-04-15 | Wacker Nsce Corporation | Silicon semiconductor wafer and method for producing the same |
US6843848B2 (en) | 2000-03-24 | 2005-01-18 | Siltronic Ag | Semiconductor wafer made from silicon and method for producing the semiconductor wafer |
CN103436951A (zh) * | 2013-08-27 | 2013-12-11 | 天津市环欧半导体材料技术有限公司 | 一种区熔硅单晶的拉制方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4831052A (enrdf_load_stackoverflow) * | 1971-08-26 | 1973-04-24 |
-
1980
- 1980-06-30 JP JP8887880A patent/JPS5717497A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4831052A (enrdf_load_stackoverflow) * | 1971-08-26 | 1973-04-24 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6117495A (ja) * | 1984-05-03 | 1986-01-25 | テキサス インスツルメンツ インコ−ポレイテツド | シリコン単結晶を形成する方法 |
JPS60251190A (ja) * | 1984-05-25 | 1985-12-11 | Shin Etsu Handotai Co Ltd | シリコン単結晶の製造方法 |
JPH033244A (ja) * | 1989-05-30 | 1991-01-09 | Shin Etsu Handotai Co Ltd | 半導体シリコン基板の熱処理方法 |
JPH05294780A (ja) * | 1992-04-21 | 1993-11-09 | Shin Etsu Handotai Co Ltd | シリコン単結晶の製造方法 |
JPH0891993A (ja) * | 1995-04-27 | 1996-04-09 | Shin Etsu Handotai Co Ltd | シリコン単結晶基板の製造方法および品質管理方法 |
US6548886B1 (en) | 1998-05-01 | 2003-04-15 | Wacker Nsce Corporation | Silicon semiconductor wafer and method for producing the same |
US6350703B1 (en) | 1998-07-08 | 2002-02-26 | Canon Kabushiki Kaisha | Semiconductor substrate and production method thereof |
US6843848B2 (en) | 2000-03-24 | 2005-01-18 | Siltronic Ag | Semiconductor wafer made from silicon and method for producing the semiconductor wafer |
CN103436951A (zh) * | 2013-08-27 | 2013-12-11 | 天津市环欧半导体材料技术有限公司 | 一种区熔硅单晶的拉制方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0341437B2 (enrdf_load_stackoverflow) | 1991-06-24 |
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