JPS62112342A - 素子分離領域の形成方法 - Google Patents
素子分離領域の形成方法Info
- Publication number
- JPS62112342A JPS62112342A JP25096585A JP25096585A JPS62112342A JP S62112342 A JPS62112342 A JP S62112342A JP 25096585 A JP25096585 A JP 25096585A JP 25096585 A JP25096585 A JP 25096585A JP S62112342 A JPS62112342 A JP S62112342A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- silicon oxide
- silicon
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 52
- 230000003647 oxidation Effects 0.000 claims abstract description 29
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 29
- 238000005530 etching Methods 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000002955 isolation Methods 0.000 claims abstract description 20
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000001947 vapour-phase growth Methods 0.000 claims abstract description 7
- 239000002253 acid Substances 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 8
- 238000005121 nitriding Methods 0.000 abstract description 5
- 230000006837 decompression Effects 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 21
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000035515 penetration Effects 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910007258 Si2H4 Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25096585A JPS62112342A (ja) | 1985-11-11 | 1985-11-11 | 素子分離領域の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25096585A JPS62112342A (ja) | 1985-11-11 | 1985-11-11 | 素子分離領域の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62112342A true JPS62112342A (ja) | 1987-05-23 |
| JPH0416020B2 JPH0416020B2 (enExample) | 1992-03-19 |
Family
ID=17215653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25096585A Granted JPS62112342A (ja) | 1985-11-11 | 1985-11-11 | 素子分離領域の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62112342A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0486791U (enExample) * | 1990-12-03 | 1992-07-28 |
-
1985
- 1985-11-11 JP JP25096585A patent/JPS62112342A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0486791U (enExample) * | 1990-12-03 | 1992-07-28 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0416020B2 (enExample) | 1992-03-19 |
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