JPH0416020B2 - - Google Patents
Info
- Publication number
- JPH0416020B2 JPH0416020B2 JP25096585A JP25096585A JPH0416020B2 JP H0416020 B2 JPH0416020 B2 JP H0416020B2 JP 25096585 A JP25096585 A JP 25096585A JP 25096585 A JP25096585 A JP 25096585A JP H0416020 B2 JPH0416020 B2 JP H0416020B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxidation
- oxide film
- forming
- resistant film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000003647 oxidation Effects 0.000 claims description 51
- 238000007254 oxidation reaction Methods 0.000 claims description 51
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 38
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 38
- 238000005530 etching Methods 0.000 claims description 24
- 238000002955 isolation Methods 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- 238000001312 dry etching Methods 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 24
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 24
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 230000035515 penetration Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25096585A JPS62112342A (ja) | 1985-11-11 | 1985-11-11 | 素子分離領域の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25096585A JPS62112342A (ja) | 1985-11-11 | 1985-11-11 | 素子分離領域の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62112342A JPS62112342A (ja) | 1987-05-23 |
| JPH0416020B2 true JPH0416020B2 (enExample) | 1992-03-19 |
Family
ID=17215653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25096585A Granted JPS62112342A (ja) | 1985-11-11 | 1985-11-11 | 素子分離領域の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62112342A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2504357Y2 (ja) * | 1990-12-03 | 1996-07-10 | 日立マクセル株式会社 | テ―プカ―トリッジの収納ケ―ス |
-
1985
- 1985-11-11 JP JP25096585A patent/JPS62112342A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62112342A (ja) | 1987-05-23 |
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