JPS6210031B2 - - Google Patents
Info
- Publication number
- JPS6210031B2 JPS6210031B2 JP55128311A JP12831180A JPS6210031B2 JP S6210031 B2 JPS6210031 B2 JP S6210031B2 JP 55128311 A JP55128311 A JP 55128311A JP 12831180 A JP12831180 A JP 12831180A JP S6210031 B2 JPS6210031 B2 JP S6210031B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- transistor
- emitter
- substrate
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 9
- 238000011084 recovery Methods 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 3
- TVZRAEYQIKYCPH-UHFFFAOYSA-N 3-(trimethylsilyl)propane-1-sulfonic acid Chemical compound C[Si](C)(C)CCCS(O)(=O)=O TVZRAEYQIKYCPH-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55128311A JPS5752175A (en) | 1980-09-16 | 1980-09-16 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55128311A JPS5752175A (en) | 1980-09-16 | 1980-09-16 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5752175A JPS5752175A (en) | 1982-03-27 |
| JPS6210031B2 true JPS6210031B2 (enrdf_load_stackoverflow) | 1987-03-04 |
Family
ID=14981628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55128311A Granted JPS5752175A (en) | 1980-09-16 | 1980-09-16 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5752175A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0245135U (enrdf_load_stackoverflow) * | 1988-09-16 | 1990-03-28 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58168150U (ja) * | 1982-05-04 | 1983-11-09 | 三洋電機株式会社 | コンデンサマイクロホン用ｆｅｔ |
-
1980
- 1980-09-16 JP JP55128311A patent/JPS5752175A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0245135U (enrdf_load_stackoverflow) * | 1988-09-16 | 1990-03-28 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5752175A (en) | 1982-03-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2773474B2 (ja) | 半導体装置 | |
| JP2773487B2 (ja) | トンネルトランジスタ | |
| JPH0230588B2 (enrdf_load_stackoverflow) | ||
| JPH0865063A (ja) | 半導体集積回路 | |
| JPH07169774A (ja) | ベースが埋設されインターデジタル形状を有する垂直バイポーラ電力トランジスタ | |
| JPS6210031B2 (enrdf_load_stackoverflow) | ||
| US3969747A (en) | Complementary bipolar transistors with IIL type common base drivers | |
| JPH0654777B2 (ja) | ラテラルトランジスタを有する回路 | |
| JP3008952B2 (ja) | Ｎｐｎ逆ベータ感度を減少させたフィードホワードダーリントン回路 | |
| EP0066041B1 (en) | Semiconductor device including resistive elements | |
| JPS5933985B2 (ja) | 半導体装置 | |
| JPH05299651A (ja) | バックゲート端子付ｍｏｓｆｅｔ | |
| JPS62104068A (ja) | 半導体集積回路装置 | |
| JP2517229B2 (ja) | 差動増幅回路 | |
| JP2716152B2 (ja) | ラテラルトランジスタ | |
| JP2690201B2 (ja) | 半導体集積回路 | |
| JPH09246572A (ja) | 定電圧ダイオード | |
| JP2671304B2 (ja) | 論理回路 | |
| KR940008215B1 (ko) | 쌍방향성 특성의 트랜지스터 소자 | |
| JPH0132665B2 (enrdf_load_stackoverflow) | ||
| JP2926785B2 (ja) | 半導体装置 | |
| JPS6338266A (ja) | 定電圧ダイオ−ド | |
| JPS6236917A (ja) | 集積回路装置 | |
| JPH05121672A (ja) | 半導体装置 | |
| JPS596065B2 (ja) | ハンドウタイソウチ |