JPS5752175A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5752175A
JPS5752175A JP55128311A JP12831180A JPS5752175A JP S5752175 A JPS5752175 A JP S5752175A JP 55128311 A JP55128311 A JP 55128311A JP 12831180 A JP12831180 A JP 12831180A JP S5752175 A JPS5752175 A JP S5752175A
Authority
JP
Japan
Prior art keywords
transistor
gate
transistors
field effect
type field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55128311A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6210031B2 (enrdf_load_stackoverflow
Inventor
Kiyoto Matsumoto
Osamu Nishino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55128311A priority Critical patent/JPS5752175A/ja
Publication of JPS5752175A publication Critical patent/JPS5752175A/ja
Publication of JPS6210031B2 publication Critical patent/JPS6210031B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP55128311A 1980-09-16 1980-09-16 Semiconductor device Granted JPS5752175A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55128311A JPS5752175A (en) 1980-09-16 1980-09-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55128311A JPS5752175A (en) 1980-09-16 1980-09-16 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5752175A true JPS5752175A (en) 1982-03-27
JPS6210031B2 JPS6210031B2 (enrdf_load_stackoverflow) 1987-03-04

Family

ID=14981628

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55128311A Granted JPS5752175A (en) 1980-09-16 1980-09-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5752175A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168150U (ja) * 1982-05-04 1983-11-09 三洋電機株式会社 コンデンサマイクロホン用ｆｅｔ

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0245135U (enrdf_load_stackoverflow) * 1988-09-16 1990-03-28

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58168150U (ja) * 1982-05-04 1983-11-09 三洋電機株式会社 コンデンサマイクロホン用ｆｅｔ

Also Published As

Publication number Publication date
JPS6210031B2 (enrdf_load_stackoverflow) 1987-03-04

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