JPS6183699A - 分子線エピタキシ装置 - Google Patents

分子線エピタキシ装置

Info

Publication number
JPS6183699A
JPS6183699A JP20162084A JP20162084A JPS6183699A JP S6183699 A JPS6183699 A JP S6183699A JP 20162084 A JP20162084 A JP 20162084A JP 20162084 A JP20162084 A JP 20162084A JP S6183699 A JPS6183699 A JP S6183699A
Authority
JP
Japan
Prior art keywords
substrate
chamber
cassette
introduction chamber
growth chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20162084A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0375515B2 (cg-RX-API-DMAC7.html
Inventor
Tatsuo Moroi
師井　達夫
Naoyuki Tamura
直行 田村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP20162084A priority Critical patent/JPS6183699A/ja
Publication of JPS6183699A publication Critical patent/JPS6183699A/ja
Publication of JPH0375515B2 publication Critical patent/JPH0375515B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP20162084A 1984-09-28 1984-09-28 分子線エピタキシ装置 Granted JPS6183699A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20162084A JPS6183699A (ja) 1984-09-28 1984-09-28 分子線エピタキシ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20162084A JPS6183699A (ja) 1984-09-28 1984-09-28 分子線エピタキシ装置

Publications (2)

Publication Number Publication Date
JPS6183699A true JPS6183699A (ja) 1986-04-28
JPH0375515B2 JPH0375515B2 (cg-RX-API-DMAC7.html) 1991-12-02

Family

ID=16444077

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20162084A Granted JPS6183699A (ja) 1984-09-28 1984-09-28 分子線エピタキシ装置

Country Status (1)

Country Link
JP (1) JPS6183699A (cg-RX-API-DMAC7.html)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5615031A (en) * 1979-07-17 1981-02-13 Matsushita Electric Ind Co Ltd Molecular beam epitaxial growing apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5615031A (en) * 1979-07-17 1981-02-13 Matsushita Electric Ind Co Ltd Molecular beam epitaxial growing apparatus

Also Published As

Publication number Publication date
JPH0375515B2 (cg-RX-API-DMAC7.html) 1991-12-02

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