JPH0375515B2 - - Google Patents

Info

Publication number
JPH0375515B2
JPH0375515B2 JP59201620A JP20162084A JPH0375515B2 JP H0375515 B2 JPH0375515 B2 JP H0375515B2 JP 59201620 A JP59201620 A JP 59201620A JP 20162084 A JP20162084 A JP 20162084A JP H0375515 B2 JPH0375515 B2 JP H0375515B2
Authority
JP
Japan
Prior art keywords
substrate
cassette
introduction chamber
chamber
equalizing plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59201620A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6183699A (ja
Inventor
Tatsuo Moroi
Naoyuki Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP20162084A priority Critical patent/JPS6183699A/ja
Publication of JPS6183699A publication Critical patent/JPS6183699A/ja
Publication of JPH0375515B2 publication Critical patent/JPH0375515B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP20162084A 1984-09-28 1984-09-28 分子線エピタキシ装置 Granted JPS6183699A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20162084A JPS6183699A (ja) 1984-09-28 1984-09-28 分子線エピタキシ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20162084A JPS6183699A (ja) 1984-09-28 1984-09-28 分子線エピタキシ装置

Publications (2)

Publication Number Publication Date
JPS6183699A JPS6183699A (ja) 1986-04-28
JPH0375515B2 true JPH0375515B2 (cg-RX-API-DMAC7.html) 1991-12-02

Family

ID=16444077

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20162084A Granted JPS6183699A (ja) 1984-09-28 1984-09-28 分子線エピタキシ装置

Country Status (1)

Country Link
JP (1) JPS6183699A (cg-RX-API-DMAC7.html)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5615031A (en) * 1979-07-17 1981-02-13 Matsushita Electric Ind Co Ltd Molecular beam epitaxial growing apparatus

Also Published As

Publication number Publication date
JPS6183699A (ja) 1986-04-28

Similar Documents

Publication Publication Date Title
JP2766774B2 (ja) 大面積ガラス基板の冷却および加熱方法とそのための装置
JP2600399B2 (ja) 半導体ウエーハ処理装置
JP7105751B2 (ja) 処理装置
JP4623715B2 (ja) 基板搬送機構及び該基板搬送機構を備える基板搬送装置
KR20180098448A (ko) 잔류 가스 제거 장치 및 이를 포함하는 기판 처리 설비
KR100456711B1 (ko) 열처리장치
JPH0375515B2 (cg-RX-API-DMAC7.html)
JPH10172978A (ja) 基板処理装置
JP2973141B2 (ja) 真空装置及びその制御方法
JP3176153B2 (ja) 半導体製造装置
JP2695299B2 (ja) 半導体製造装置
JP2004023032A (ja) 半導体製造装置
JPH04349929A (ja) 真空装置
JPH02282087A (ja) 半導体製品の保管容器
JPS5918195A (ja) 超高真空薄膜成長装置
JPH0521867Y2 (cg-RX-API-DMAC7.html)
JP2002033280A (ja) 真空成膜装置、仕込・取出室及び仕込・取出室内部の排気方法
US7089680B1 (en) Vacuum processing apparatus and operating method therefor
JP3176104B2 (ja) 半導体製造装置
JP4679369B2 (ja) 基板処理装置および半導体装置の製造方法
JPH06132379A (ja) 真空処理装置及び真空処理方法
JPS63187631A (ja) プラズマ処理装置
JP2001332173A5 (cg-RX-API-DMAC7.html)
JPS63270388A (ja) 分子線結晶成長装置
JPH0798963B2 (ja) 希土類磁石合金の焼結炉